SCHEMBL5438375

SCHEMBL5438375

C=C(C)C(=O)OC(C)(C)C.Cc1ccc(C=CC=Cc2ccc(O)cc2)cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 3/20 0.44
POLB P06746 1/20 0.44
MAOA P21397 1/20 0.44
MAOB P27338 1/20 0.44
RAB9A P51151 1/20 0.44
APP P05067 1/20 0.42
MMP1 P03956 1/20 0.42
MMP2 P08253 1/20 0.42
MMP9 P14780 1/20 0.42
MIF P14174 2/20 0.41
STAT3 P40763 1/20 0.40
SLC5A1 P13866 1/20 0.40
SLC5A2 P31639 1/20 0.40
KDM4E B2RXH2 1/20 0.39
ALDH1A1 P00352 1/20 0.39
CA12 O43570 3/20 0.38
CA1 P00915 3/20 0.38
CA2 P00918 3/20 0.38
CA7 P43166 3/20 0.38
CA9 Q16790 3/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5453653 0.89 MAPT (0.44) MAPTPOLBMAOAMAOBRAB9A
SCHEMBL1506495 0.89 APP (0.42) MAPTMAOAMAOBRAB9AAPP
SCHEMBL5433795 0.88 CYP1A2 (0.44) MAPTPOLBRAB9AAPPMIF
SCHEMBL5454879 0.88 MMP1 (0.42) MAOAMAOBAPPMMP1MMP2
4-Vinylphenol SCHEMBL7137940 0.88 MIF (0.42) MAPTPOLBMAOAMAOBRAB9A
SCHEMBL3325658 0.87 STAT3 (0.44) MAPTMAOBRAB9AAPPMMP1
SCHEMBL5438976 0.86 KDM4E (0.41) MAPTPOLBRAB9AAPPMMP2
SCHEMBL5439345 0.86 APP (0.39) MAPTPOLBMAOAMAOBRAB9A
SCHEMBL5453739 0.85 MAPT (0.39) MAPTPOLBMAOAMAOBRAB9A
Styrene SCHEMBL7711595 0.85 CYP3A4 (0.41) MAPTMAOAMAOBRAB9AAPP

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed