SCHEMBL5440577

SCHEMBL5440577

C=C(C)C(=O)OC(c1ccccc1)(c1ccccc1)c1ccccc1.Oc1ccc(C=CC=Cc2ccccc2)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
APP P05067 1/20 0.40
CYP3A4 P08684 3/20 0.40
ABCG2 Q9UNQ0 1/20 0.39
STAT3 P40763 1/20 0.39
MAOB P27338 3/20 0.38
HSPD1 P10809 2/20 0.38
HSPE1 P61604 2/20 0.38
KMT2A Q03164 2/20 0.38
MAPT P10636 2/20 0.38
PKM P14618 2/20 0.38
TDP1 Q9NUW8 2/20 0.38
NFKB1 P19838 1/20 0.38
RAB9A P51151 1/20 0.38
NFKB2 Q00653 1/20 0.38
RELA Q04206 1/20 0.38
MEN1 O00255 1/20 0.38
ALDH2 P05091 1/20 0.38
CYP19A1 P11511 1/20 0.38
F3 P13726 1/20 0.38
MAOA P21397 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5439130 0.94 MAPT (0.40) APPCYP3A4ABCG2STAT3MAOB
SCHEMBL5450238 0.93 TRPV1 (0.41) APPCYP3A4ABCG2STAT3HSPD1
SCHEMBL5453451 0.89 APP (0.39) APPCYP3A4ABCG2STAT3MAOB
SCHEMBL1506495 0.87 APP (0.42) APPCYP3A4ABCG2STAT3MAOB
SCHEMBL5453739 0.83 MAPT (0.39) APPCYP3A4STAT3MAOBHSPD1
SCHEMBL5453535 0.83 TRPV1 (0.41) APPCYP3A4STAT3HSPD1HSPE1
Styrene SCHEMBL7711595 0.82 CYP3A4 (0.41) APPCYP3A4ABCG2STAT3MAOB
SCHEMBL2708790 0.82 ABCG2 (0.49) APPCYP3A4ABCG2STAT3MAOB
SCHEMBL435821 0.82 ELANE (0.45) KMT2AMAPTTDP1MEN1KDM4E
SCHEMBL5439459 0.82 APP (0.42) APPCYP3A4ABCG2STAT3MAOB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed