SCHEMBL5453739

SCHEMBL5453739

C=C(C)C(=O)OC(C)(C)c1ccccc1.Cc1ccc(C=CC=Cc2ccc(O)cc2)cc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 4/20 0.39
RAB9A P51151 2/20 0.39
POLB P06746 1/20 0.39
MAOA P21397 1/20 0.39
MAOB P27338 1/20 0.39
CYP3A4 P08684 4/20 0.37
ALDH1A1 P00352 3/20 0.37
HPGD P15428 1/20 0.37
MMP1 P03956 1/20 0.37
MMP2 P08253 1/20 0.37
MMP9 P14780 1/20 0.37
KMT2A Q03164 2/20 0.37
MEN1 O00255 1/20 0.37
GAA P10253 1/20 0.37
APP P05067 1/20 0.36
STAT3 P40763 1/20 0.36
HSPD1 P10809 1/20 0.35
PKM P14618 1/20 0.35
NFKB1 P19838 1/20 0.35
HSPE1 P61604 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5453451 0.94 APP (0.39) MAPTRAB9AMAOAMAOBCYP3A4
SCHEMBL5453535 0.91 TRPV1 (0.41) MAPTRAB9ACYP3A4ALDH1A1KMT2A
SCHEMBL5439130 0.89 MAPT (0.40) MAPTRAB9APOLBMAOAMAOB
SCHEMBL5438375 0.85 MAPT (0.44) MAPTRAB9APOLBMAOAMAOB
SCHEMBL5440577 0.83 APP (0.40) MAPTRAB9AMAOAMAOBCYP3A4
SCHEMBL1506495 0.83 APP (0.42) MAPTRAB9AMAOAMAOBCYP3A4
SCHEMBL5450238 0.81 TRPV1 (0.41) MAPTRAB9ACYP3A4ALDH1A1KMT2A
SCHEMBL3393201 0.79 ALDH1A1 (0.48) MAPTCYP3A4ALDH1A1KMT2AHDAC3
Styrene SCHEMBL7711595 0.79 CYP3A4 (0.41) MAPTRAB9AMAOAMAOBCYP3A4
SCHEMBL14827345 0.78 TSHR (0.39) MAPTRAB9AALDH1A1HPGDKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed