Carbon Monoxide

Carbon Monoxide

SCHEMBL544386

C=CC[Co].[C]=O.[C]=O.[C]=O

nearest known ligand 0.31

Full drug profile on Sugi Atlas →

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.31
ALDH1A1 P00352 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Carbon Monoxide SCHEMBL934412 1.00
Formaldehyde SCHEMBL14054347 0.87 TSHR (0.33) TSHRALDH1A1
SCHEMBL1231386 0.87
Phosphine SCHEMBL25383103 0.82
SCHEMBL16738291 0.82
Carbon Monoxide SCHEMBL2842408 0.67 TSHR (0.31) TSHRALDH1A1
Carbon Monoxide SCHEMBL2844193 0.67
Allyl Alcohol SCHEMBL7495069 0.67
Carbon Monoxide SCHEMBL9016270 0.67
Carbon Monoxide SCHEMBL6131565 0.67 TSHR (0.31) TSHRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 181 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240218503-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2024-07-04 US claimed
US-11959167-B2 Selective cobalt deposition on copper surfaces APPLIED MATERIALS, INC. (US) 2024-04-16 US claimed
US-20220298625-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2022-09-22 US claimed
US-11384429-B2 Selective cobalt deposition on copper surfaces APPLIED MATERIALS, INC. (US) 2022-07-12 US claimed
EP-3574125-B1 ENHANCED COBALT AGGLOMERATION RESISTANCE AND GAP-FILL PERFORMANCE BY RUTHENIUM DOPING APPLIED MATERIALS INC (US) 2021-11-17 EP claimed
US-11043415-B2 Enhanced cobalt agglomeration resistance and gap-fill performance by ruthenium doping APPLIED MATERIALS, INC. (US) 2021-06-22 US claimed
WO-2021041593-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. (US) 2021-03-04 WO claimed
US-20210062330-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2021-03-04 US claimed
US-20200235006-A1 ENHANCED COBALT AGGLOMERATION RESISTANCE AND GAP-FILL PERFORMANCE BY RUTHENIUM DOPING APPLIED MATERIALS, INC. 2020-07-23 US claimed
US-10600685-B2 Methods to fill high aspect ratio features on semiconductor substrates with MOCVD cobalt film APPLIED MATERIALS, INC. (US) 2020-03-24 US claimed
US-7718527-B2 Method for forming cobalt tungsten cap layers TOKYO ELECTRON LIMITED (JP) 2010-05-18 US claimed
US-20100081275-A1 METHOD FOR FORMING COBALT NITRIDE CAP LAYERS TOKYO ELECTRON LIMITED (JP) 2010-04-01 US claimed
US-20100081276-A1 METHOD FOR FORMING COBALT TUNGSTEN CAP LAYERS TOKYO ELECTRON LIMITED (JP) 2010-04-01 US claimed
WO-2009134840-A2 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. (US) 2009-11-05 WO claimed
WO-2009134925-A2 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS APPLIED MATERIALS, INC. (US) 2009-11-05 WO claimed
US-20090269507-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2009-10-29 US claimed
US-20090246952-A1 METHOD OF FORMING A COBALT METAL NITRIDE BARRIER FILM TOKYO ELECTRON LIMITED (JP) 2009-10-01 US claimed
US-20080268635-A1 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS APPLIED MATERIALS, INC. 2008-10-30 US claimed
WO-2007121249-A2 PROCESS FOR FORMING COBALT-CONTAINING MATERIALS APPLIED MATERIALS, INC. (US) 2007-10-25 WO claimed
US-20070202254-A1 PROCESS FOR FORMING COBALT-CONTAINING MATERIALS APPLIED MATERIALS, INC. 2007-08-30 US claimed