SCHEMBL5448012

SCHEMBL5448012

C=CC(=O)OC(c1ccccc1)(c1ccccc1)c1ccccc1.CC(C)(C)c1ccc(C=CC=Cc2ccc(O)cc2)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TRPV1 Q8NER1 2/20 0.41
CYP1A2 P05177 1/20 0.40
ESRRG P62508 2/20 0.38
TYR P14679 2/20 0.38
LMNA P02545 2/20 0.38
ESR1 P03372 3/20 0.38
ESR2 Q92731 2/20 0.38
CYP3A4 P08684 2/20 0.38
ALDH1A1 P00352 2/20 0.38
CA12 O43570 2/20 0.38
CA7 P43166 2/20 0.38
CA9 Q16790 2/20 0.38
CA14 Q9ULX7 2/20 0.38
AKR1B10 O60218 2/20 0.38
AKR1B1 P15121 2/20 0.38
CA4 P22748 1/20 0.38
CA6 P23280 1/20 0.38
CA5A P35218 1/20 0.38
CA5B Q9Y2D0 1/20 0.38
TNIK Q9UKE5 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5439459 0.91 APP (0.42) TYRESR1ESR2CYP3A4ALDH1A1
SCHEMBL5440639 0.89 MAPT (0.41) TYRCYP3A4ALDH1A1CA12CA7
SCHEMBL5452249 0.86 CYP1A2 (0.45) TRPV1CYP1A2ESRRGTYRLMNA
SCHEMBL7139686 0.85 APP (0.41) TYRESR1ESR2CYP3A4ALDH1A1
SCHEMBL5450238 0.85 TRPV1 (0.41) TRPV1CYP1A2ESRRGTYRLMNA
Acrylic Acid Methyl Ester SCHEMBL2706204 0.82 CA1 (0.53) TRPV1CYP1A2ESRRGTYRLMNA
SCHEMBL1506719 0.82 APP (0.43) TYRESR1ESR2CYP3A4ALDH1A1
Acrylic Acid Ethyl Ester SCHEMBL2707789 0.79 CA12 (0.56) CYP1A2ESRRGTYRLMNAESR1
SCHEMBL7106755 0.78 CA12 (0.42) TYRESR1ESR2CYP3A4CA12
SCHEMBL5453535 0.78 TRPV1 (0.41) TRPV1CYP1A2ESRRGTYRLMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed