SCHEMBL5440639

SCHEMBL5440639

C=CC(=O)OC(c1ccccc1)(c1ccccc1)c1ccccc1.Cc1ccc(C=CC=Cc2ccc(O)cc2)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 5/20 0.41
RAB9A P51151 2/20 0.41
MAOB P27338 2/20 0.41
POLB P06746 1/20 0.41
MAOA P21397 1/20 0.41
CYP3A4 P08684 2/20 0.39
ALDH1A1 P00352 2/20 0.39
HPGD P15428 1/20 0.39
CA12 O43570 3/20 0.39
CA7 P43166 3/20 0.39
CA9 Q16790 3/20 0.39
CA14 Q9ULX7 3/20 0.39
AKR1B10 O60218 2/20 0.39
AKR1B1 P15121 2/20 0.39
MMP1 P03956 1/20 0.39
MMP2 P08253 1/20 0.39
MMP9 P14780 1/20 0.39
CA4 P22748 1/20 0.39
CA6 P23280 1/20 0.39
CA5A P35218 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5439459 0.92 APP (0.42) MAPTRAB9AMAOBMAOACYP3A4
SCHEMBL5448012 0.89 TRPV1 (0.41) MAPTRAB9AMAOBCYP3A4ALDH1A1
SCHEMBL5439130 0.84 MAPT (0.40) MAPTRAB9AMAOBPOLBMAOA
SCHEMBL7139686 0.84 APP (0.41) MAPTRAB9AMAOBMAOACYP3A4
SCHEMBL5440924 0.83 MAPT (0.46) MAPTRAB9AMAOBPOLBMAOA
SCHEMBL1506719 0.81 APP (0.43) MAPTRAB9AMAOBMAOACYP3A4
Acrylic Acid Methyl Ester SCHEMBL2708897 0.79 CA12 (0.57) MAPTRAB9AMAOBPOLBMAOA
SCHEMBL438661 0.78 THRB (0.43) MAPTCYP3A4ALDH1A1KMT2AMEN1
SCHEMBL5440577 0.78 APP (0.40) MAPTRAB9AMAOBMAOACYP3A4
SCHEMBL27702244 0.77 THRB (0.42) MAPTCYP3A4ALDH1A1KMT2AMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed