⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1805488 | 1.00 | — | — | |
| SCHEMBL8700654 | 0.87 | — | — | |
| SCHEMBL29254371 | 0.87 | — | — | |
| SCHEMBL27752876 | 0.87 | — | — | |
| SCHEMBL15168920 | 0.87 | — | — | |
| SCHEMBL3417125 | 0.87 | — | — | |
| SCHEMBL29158131 | 0.87 | — | — | |
| SCHEMBL6281291 | 0.87 | — | — | |
| SCHEMBL31668846 | 0.87 | — | — | |
| SCHEMBL27717155 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 309 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119050064-A | Low-warpage fan-out type wafer level packaging structure and preparation method thereof | 贵州振华风光半导体股份有限公司 | 2024-11-29 | — | — | CN | claimed |
| CN-117696037-A | Air purifying material based on copper-tungsten-titanium composite oxide and preparation method thereof | 哈尔滨工业大学(深圳)(哈尔滨工业大学深圳科技创新研究院) | 2024-03-15 | — | — | CN | claimed |
| CN-116490015-A | Alloy electrode of perovskite photoelectric device | 广东脉络能源科技有限公司 | 2023-07-25 | — | — | CN | claimed |
| CN-116072548-A | Method for manufacturing semiconductor device | 颀邦科技股份有限公司 | 2023-05-05 | — | — | CN | claimed |
| CN-114792680-A | Power management chip packaging structure and manufacturing method thereof | 江苏长电科技股份有限公司 | 2022-07-26 | — | — | CN | claimed |
| US-9805977-B1 | Integrated circuit structure having through-silicon via and method of forming same | GLOBALFOUNDRIES INC. (US) | 2017-10-31 | — | — | US | claimed |
| CN-103531491-B | Semiconductor process, semiconductor structure and packaging structure thereof | 颀邦科技股份有限公司 | 2017-04-12 | — | — | CN | claimed |
| CN-103871912-B | Semiconductor process and structure thereof | 颀邦科技股份有限公司 | 2017-04-12 | — | — | CN | claimed |
| US-9577025-B2 | Metal-insulator-metal (MIM) capacitor in redistribution layer (RDL) of an integrated device | QUALCOMM INCORPORATED (US) | 2017-02-21 | — | — | US | claimed |
| CN-104741774-B | The welding method of tungsten titanium copper target material assembly | 宁波江丰电子材料股份有限公司 | 2016-08-31 | — | — | CN | claimed |
| US-20120184099-A1 | LASER REMOVAL OF CONDUCTIVE SEED LAYERS | TAMARACK SCIENTIFIC CO. INC. (US) | 2012-07-19 | — | — | US | claimed |
| CN-101944434-B | polymer composite material embedded micro-capacitor and preparation method thereof | UNIV TSINGHUA | 2012-05-09 | — | — | CN | claimed |
| US-8110508-B2 | Method of forming a bump structure using an etching composition for an under bump metallurgy layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-02-07 | — | — | US | claimed |
| CN-101534103-B | Method for manufacturing radio frequency filter capable of being integrated on single chip | SHANGHAI INST MICROSYS & INF | 2011-06-15 | — | — | CN | claimed |
| CN-101534103-A | Radio frequency filter capable of being integrated in single chip and manufacturing method | SHANGHAI INST MICROSYS & INF | 2009-09-16 | — | — | CN | claimed |
| US-20090176363-A1 | Etching composition for an under-bump metallurgy layer and method of forming a bump structure using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-07-09 | — | — | US | claimed |
| CN-101440491-A | Method for forming convex point structure formed by etching composition for convex point lower metal layer | SAMSUNG ELECTRONICS CO LTD (KR) | 2009-05-27 | — | — | CN | claimed |
| CN-100405543-C | Manufacturing method of CMOS (complementary Metal-oxide-semiconductor transistor) process-compatible inductor or mutual inductor with embedded suspension solenoid structure | SHANGHAI INST OF MICRO SYSTEM (CN) | 2008-07-23 | — | — | CN | claimed |
| CN-101110354-A | Manufacturing method of CMOS process compatible suspension type variable capacitor | SHANGHAI INST MICROSYS & INF (CN) | 2008-01-23 | — | — | CN | claimed |
| CN-1889233-A | Manufacturing method of CMOS (complementary Metal-oxide-semiconductor transistor) process-compatible inductor or mutual inductor with embedded suspension solenoid structure | SHANGHAI INST OF MICRO SYSTEM (CN) | 2007-01-03 | — | — | CN | claimed |