SCHEMBL545256

SCHEMBL545256

Cc1ccc(O)c(CN(CCN(CC(=O)O)Cc2cc(C)ccc2O)CC(=O)O)c1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTT P42858 2/20 0.48
AMY1A P0DUB6 1/20 0.45
CSNK2A1 P68400 1/20 0.43
POLB P06746 2/20 0.42
GAA P10253 2/20 0.41
MAPT P10636 2/20 0.41
SMN1; SMN2 Q16637 1/20 0.41
TDP1 Q9NUW8 4/20 0.41
EYA2 O00167 1/20 0.41
APP P05067 1/20 0.41
ACE P12821 1/20 0.41
SRC P12931 1/20 0.41
PRKCI P41743 1/20 0.40
KDM4E B2RXH2 2/20 0.39
LMNA P02545 2/20 0.39
ALOX15 P16050 2/20 0.39
CHRM2 P08172 2/20 0.39
ADRA2A P08913 1/20 0.39
TSHR P16473 1/20 0.39
DRD1 P21728 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL935126 0.98 HTT (0.47) HTTAMY1ACSNK2A1POLBGAA
SCHEMBL23629772 0.98 HTT (0.47) HTTAMY1ACSNK2A1POLBGAA
SCHEMBL935095 0.98 HTT (0.47) HTTAMY1ACSNK2A1POLBGAA
Hydrochloric Acid SCHEMBL934885 0.98 HTT (0.47) HTTAMY1ACSNK2A1POLBGAA
Hydrochloric Acid SCHEMBL2794700 0.97 HTT (0.46) HTTAMY1ACSNK2A1POLBGAA
SCHEMBL3962618 0.95 HTT (0.47) HTTAMY1ACSNK2A1POLBGAA
SCHEMBL16660357 0.93 HTT (0.52) HTTAMY1ACSNK2A1GAAMAPT
SCHEMBL23425468 0.90 POLB (0.42) HTTAMY1ACSNK2A1POLBGAA
SCHEMBL22693634 0.89 HTT (0.41) HTTAMY1ACSNK2A1POLBGAA
SCHEMBL5268211 0.89 SRC (0.43) HTTCSNK2A1POLBGAAMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0858102-B1 Surface treatment composition and method for treating surface of substrate by using the same MITSUBISHI CHEM CORP (JP) 2007-07-25 EP claimed
EP-3848349-B1 A PROCESS FOR THE PREPARATION OF SALTS OF N,N'-DISUBSTITUTED ETHYLENEDIAMINE-N,N'-DIACETIC ACID DERIVATIVES AND THEIR USE PRZED PRODUKCYJNO CONSULTINGOWE ADOB SP Z O O (PL) 2023-03-15 EP disclosed
EP-3848349-A1 A PROCESS FOR THE PREPARATION OF SALTS OF N,N'-DISUBSTITUTED ETHYLENEDIAMINE-N,N'-DIACETIC ACID DERIVATIVES AND THEIR USE Przedsiebiorstwo Produkcyjno-Consultingowe ADOB Sp. z o.o. Sp. jawna (PL) 2021-07-14 EP disclosed
US-10927262-B2 Method for producing oxidized carbon black aqueous dispersion, and method for producing oxidized carbon black aqueous dispersion for inkjet ink TOKAI CARBON CO., LTD. (JP) 2021-02-23 US disclosed
US-20180022926-A1 METHOD FOR PRODUCING OXIDIZED CARBON BLACK AQUEOUS DISPERSION, AND METHOD FOR PRODUCING OXIDIZED CARBON BLACK AQUEOUS DISPERSION FOR INKJET INK TOKAI CARBON CO., LTD. (JP) 2018-01-25 US disclosed
EP-3252111-A1 METHOD FOR MANUFACTURING AQUEOUS DISPERSION OF OXIDIZED CARBON BLACK, AND METHOD FOR MANUFACTURING AQUEOUS DISPERSION OF OXIDIZED CARBON BLACK FOR INKJET INK Tokai Carbon Co., Ltd. (JP) 2017-12-06 EP disclosed
EP-1715510-B2 SUBSTRATE CLEANING LIQUID FOR SEMICONDUCTOR DEVICE AND CLEANING METHOD MITSUBISHI CHEM CORP (JP) 2016-02-24 EP disclosed
EP-2039679-B1 A process for the preparation of N,N'-bis(2-hydroxybenzyl)ethylenediamine-N,N'-diacetic acid and its derivatives PRZED PROD CONSULTINGOWE ADOB SP Z O O SP K (PL) 2015-08-12 EP disclosed
US-8629293-B2 Process for the preparation of FE(III) chelates of N,N′-DI(2-hydroxybenzyl)-ethylenediamine-N,N′-diacetic acid and its derivatives PRZEDSIEBIORSTWO PRODUKCYJNO-CONSULTINGOWE ADOB SP. Z O.O. SP. K. (PL) 2014-01-14 US disclosed
US-8431734-B2 Process for the preparation of N,N′-bis(2-hydroxybenzyl)ethylenediamine-N,N′-diacetic acid and its derivatives Przedsiebiorstwo Produkeyjno-Consultingowe Adob SP. Z O.O. SP. K. (PL) 2013-04-30 US disclosed
EP-1715510-A1 SUBSTRATE CLEANING LIQUID FOR SEMICONDUCTOR DEVICE AND CLEANING METHOD Mitsubishi Chemical Corporation (JP) 2006-10-25 EP disclosed
US-6896744-B2 Method for cleaning a surface of a substrate MITSUBISHI CHEMICAL CORPORATION (JP) 2005-05-24 US disclosed
US-20050020463-A1 Cleaning solution for cleaning substrate for semiconductor devices and cleaning method using the same MITSUBISHI CHEMICAL CORPORATION (JP) 2005-01-27 US disclosed
US-20040099290-A1 Method for cleaning a surface of a substrate MITSUBISHI CHEMICAL CORPORATION (JP) 2004-05-27 US disclosed
EP-1389496-A1 METHOD FOR CLEANING SURFACE OF SUBSTRATE MITSUBISHI CHEMICAL CORPORATION (JP) 2004-02-18 EP disclosed
EP-1342777-A1 Substrate cleaning liquid media and cleaning method MITSUBISHI CHEMICAL CORPORATION (JP) 2003-09-10 EP disclosed
US-20030144163-A1 Substrate surface cleaning liquid mediums and cleaning method MITSUBISHI CHEMICAL CORPORATION (JP) 2003-07-31 US disclosed
US-6228179-B1 CONTACTING A SEMI-CONDUCTOR SUBSTRATE WITH A SURFACE TREATMENT COMPOSITION CONTAINING A COMPLEXING AGENT AS A METAL DEPOSITION PREVENTIVE IN A LIQUID MEDIUM, IN WHICH THE COMPLEXING AGENT IS AN ETHYLENEDIAMINEPHENOL DERIVATIVE MITSUBISHI CHEMICAL CORPORATION (JP) 2001-05-08 US disclosed
US-6143706-A FOR CLEANING SUBSTRATES SUCH AS SEMICONDUCTORS; PREVENTS SUBSTRATE SURFACE FROM BEING CONTAMINATED WITH METAL IMPURITIES FROM THE SURFACE TREATMENT COMPOSITION AND STABLY PROVIDES CLEAN SUBSTRATE SURFACE MITSUBISHI CHEMICAL CORPORATION (JP) 2000-11-07 US disclosed
EP-0858102-A2 Surface treatment composition and method for treating surface of substrate by using the same MITSUBISHI CHEMICAL CORPORATION (JP) 1998-08-12 EP disclosed