SCHEMBL5454836

SCHEMBL5454836

CCC(C)O[Si](C)(C)O[Si](O[Si](C)(C)OC(C)CC)(O[Si](C)(C)OC(C)CC)O[Si](C)(C)OC(C)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26676540 0.90
SCHEMBL5467140 0.85
SCHEMBL26676626 0.85
SCHEMBL427237 0.84 TSHR (0.30)
SCHEMBL6294773 0.83
SCHEMBL11137383 0.76
SCHEMBL285341 0.75 TSHR (0.32)
SCHEMBL2925009 0.75
SCHEMBL11134698 0.74
SCHEMBL11137454 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070178319-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. (JP) 2007-08-02 US disclosed
EP-1564269-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-17 EP disclosed
US-6930393-B2 hydrolyzable silicon compound or at least one product resulting from at least partial hydrolysis condensation of the silicon compound SHIN-ETSU CHEMICAL CO. LTD. (JP) 2005-08-16 US disclosed
US-20040216641-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed
CN-1536023-A Porous membrane shaping composition, preparation method of porous membrane, porous membrane intercalation insulating film and semiconductor device ��Խ��ѧ��ҵ��ʽ���� 2004-10-13 CN disclosed
US-20040195660-A1 Composition for forming porous film, porous film and method for forming the same, interlayer insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-10-07 US disclosed