⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1614975 | 1.00 | — | — | |
| SCHEMBL5449685 | 1.00 | — | — | |
| SCHEMBL8053727 | 0.87 | — | — | |
| SCHEMBL5615419 | 0.87 | — | — | |
| SCHEMBL4918399 | 0.87 | — | — | |
| SCHEMBL29382254 | 0.82 | — | — | |
| SCHEMBL29833055 | 0.82 | — | — | |
| SCHEMBL11654272 | 0.82 | — | — | |
| SCHEMBL1902881 | 0.82 | — | — | |
| SCHEMBL34398 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-209311839-U | A kind of electrochomeric glass | 苏州天瑞纳米科技有限公司 | 2019-08-27 | — | — | CN | claimed |
| WO-2023279524-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE | 长鑫存储技术有限公司 | 2023-01-12 | — | — | WO | disclosed |
| US-20230007832-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE | CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) | 2023-01-12 | — | — | US | disclosed |
| CN-209311839-U | A kind of electrochomeric glass | 苏州天瑞纳米科技有限公司 | 2019-08-27 | — | — | CN | disclosed |
| CN-109314135-A | Grid pile stack for GaN E mode transistor performance designs | 英特尔公司 | 2019-02-05 | — | — | CN | disclosed |
| CN-107851659-A | Transistor with air gap separation body | 英特尔公司 | 2018-03-27 | — | — | CN | disclosed |
| CN-107004706-A | Integrated circuit die with reduced-defect group III-nitride structures and methods associated therewith | 英特尔公司 | 2017-08-01 | — | — | CN | disclosed |
| US-8766233-B2 | Semiconductor device with variable resistance element and method for manufacturing the same | NEC CORPORATION (JP) | 2014-07-01 | — | — | US | disclosed |
| US-20120267598-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | NEC CORPORATION (JP) | 2012-10-25 | — | — | US | disclosed |
| US-20070272974-A1 | TWIN-GATE NON-VOLATILE MEMORY CELL AND METHOD OF OPERATING THE SAME | EMEMORY TECHNOLOGY INC. (TW) | 2007-11-29 | — | — | US | disclosed |