⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9841226 | 0.87 | — | — | |
| SCHEMBL6281291 | 0.87 | — | — | |
| SCHEMBL32679254 | 0.87 | — | — | |
| SCHEMBL3417125 | 0.87 | — | — | |
| SCHEMBL6282685 | 0.82 | — | — | |
| SCHEMBL1357785 | 0.82 | — | — | |
| SCHEMBL2285707 | 0.82 | — | — | |
| SCHEMBL3934609 | 0.82 | — | — | |
| SCHEMBL8638924 | 0.82 | — | — | |
| SCHEMBL8971269 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 195 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250287626-A1 | SEMICONDUCTOR DEVICE WITH DRAIN ELECTRICAL CONTACT FORMING JUNCTIONS HAVING DIFFERENT ENERGY BARRIER HEIGHTS TO DRAIN LAYER | TEXAS INSTRUMENTS INCORPORATED | 2025-09-11 | — | — | US | claimed |
| CN-119876944-A | Synthesis method of liquid crystal film for surface of metal component | 中国航发北京航空材料研究院 | 2025-04-25 | — | — | CN | claimed |
| CN-119730252-A | Preparation method of self-selection memory integrated with CMOS | 北京大学 | 2025-03-28 | — | — | CN | claimed |
| CN-119710324-A | Aluminum-tungsten-titanium alloy and preparation method thereof | 承德天大钒业有限责任公司 | 2025-03-28 | — | — | CN | claimed |
| CN-119640073-A | Aluminum-tungsten-titanium intermediate alloy and preparation method and application thereof | 承德天大钒业有限责任公司 | 2025-03-18 | — | — | CN | claimed |
| CN-119486183-A | Semiconductor device having gate electrical contacts forming junctions with different energy barrier heights from the gate layer | 德克萨斯仪器股份有限公司 | 2025-02-18 | — | — | CN | claimed |
| US-20250048667-A1 | SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS HAVING DIFFERENT ENERGY BARRIER HEIGHTS TO GATE LAYER | TEXAS INSTRUMENTS INCORPORATED | 2025-02-06 | — | — | US | claimed |
| CN-119300704-A | Novel memory unit and preparation method and application thereof | 北京大学 | 2025-01-10 | — | — | CN | claimed |
| CN-116240535-B | Magnesium alloy titanium aluminum tungsten film treating agent, preparation method and magnesium alloy surface treatment method | 广东东明新材科技有限公司 | 2024-10-29 | — | — | CN | claimed |
| CN-118019351-A | Novel three-dimensional memory array and preparation method thereof | 北京大学 | 2024-05-10 | — | — | CN | claimed |
| CN-103225033-A | Low-W high-Nb lamellar structure Ti-Al alloy and preparation method thereof | UNIV NANJING SCIENCE & TECH | 2013-07-31 | — | — | CN | claimed |
| US-20120200640-A1 | LOW-PROFILE MEMS THERMAL PRINTHEAD DIE HAVING BACKSIDE ELECTRICAL CONNECTIONS | KATEEVA, INC. (US) | 2012-08-09 | — | — | US | claimed |
| US-8110845-B2 | Light-emitting device containing a composite electroplated substrate | EPISTAR CORPORATION (TW) | 2012-02-07 | — | — | US | claimed |
| US-20110266581-A1 | LIGHT-EMITTING DEVICE CONTAINING A COMPOSITE ELECTROPLATED SUBSTRATE | EPISTAR CORPORATION (TW) | 2011-11-03 | — | — | US | claimed |
| US-20100025714-A1 | LIGHT-EMITTING DEVICE CONTAINING A COMPOSITE ELECTROPLATED SUBSTRATE | EPISTAR CORPORATION (TW) | 2010-02-04 | — | — | US | claimed |
| CN-101545065-A | Aluminum-tungsten-titanium master alloy and preparation method thereof | BAOTI SPECIAL METASL CO LTD | 2009-09-30 | — | — | CN | claimed |
| US-7064428-B2 | Wafer-level package structure | ADVANCED SEMICONDUCTOR ENGINEERING, INC. (TW) | 2006-06-20 | — | — | US | claimed |
| US-20050161812-A1 | WAFER-LEVEL PACKAGE STRUCTURE | TONG HO-MING (TW) | 2005-07-28 | — | — | US | claimed |
| US-20030160323-A1 | WAFER-LEVEL PACKAGE STRUCTURE | ADVANCED SEMICONDUCTOR ENGINEERING, INC. (TW) | 2003-08-28 | — | — | US | claimed |
| US-4062677-A | Tungsten-titanium-aluminum master alloy | READING ALLOYS, INC. (US) | 1977-12-13 | — | — | US | claimed |