⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2176864 | 0.87 | — | — | |
| SCHEMBL2206006 | 0.87 | — | — | |
| SCHEMBL6793898 | 0.87 | — | — | |
| SCHEMBL50133 | 0.87 | — | — | |
| SCHEMBL43605 | 0.82 | — | — | |
| SCHEMBL10426231 | 0.78 | — | — | |
| SCHEMBL2313105 | 0.67 | — | — | |
| SCHEMBL15355465 | 0.67 | — | — | |
| SCHEMBL60807 | 0.67 | — | — | |
| SCHEMBL11425136 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 147 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20190296181-A1 | ALUMINUM GALLIUM ARSENIDE AND INDIUM GALLIUM PHOSPHIDE POWER CONVERTER ON SILICON | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2019-09-26 | — | — | US | claimed |
| WO-2008043843-A1 | ELECTRONICALLY ADJUSTABLE GAIN SLOPE CONTROLLER CIRCUIT | TELEFONAKTIEBOLAGET LM ERICSSON (PUBL) (SE) | 2008-04-17 | — | — | WO | claimed |
| US-7141446-B2 | Optically- and electrically-addressable concentrators of biological and chemical materials | HRL LABORATORIES, LLC (US) | 2006-11-28 | — | — | US | claimed |
| US-6870234-B2 | Optically- and electrically-addressable concentrators of biological and chemical materials | HRL LABORATORIES, LLC (US) | 2005-03-22 | — | — | US | claimed |
| US-20050042773-A1 | Optically-and electrically-addressable concentrators of biological and chemical materials | HRL LABORATORIES, LLC | 2005-02-24 | — | — | US | claimed |
| US-20030066999-A1 | Optically- and electrically-addressable concentrators of biological and chemical materials | HRL LABORATORIES, LLC | 2003-04-10 | — | — | US | claimed |
| WO-2003021268-A1 | ADDRESSABLE CONCENTRATORS | HRL LABORATORIES, LLC (US) | 2003-03-13 | — | — | WO | claimed |
| EP-0458409-B1 | Radiation-emitting semiconductor device and method of manufacturing same | UNIPHASE OPTO HOLDINGS INC (US) | 2002-02-20 | — | — | EP | claimed |
| US-5296717-A | Multilayer diodes with buffer layers, cladding layers and active layers with aluminum, gallium arsenic and phosphorous | U.S. PHILIPS CORPORATION (US) | 1994-03-22 | — | — | US | claimed |
| US-4971928-A | Method of making a light emitting semiconductor having a rear reflecting surface | GENERAL MOTORS CORPORATION (US) | 1990-11-20 | — | — | US | claimed |
| US-4127792-A | Luminescent semiconductor display device including gate control electrodes | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 1978-11-28 | — | — | US | claimed |
| JP-2003223-A | — | — | None | — | — | JP | disclosed |
| JP-63081989-A | — | — | None | — | — | JP | disclosed |
| US-11309453-B2 | Combining light-emitting elements of differing divergence on the same substrate | APPLE INC. (US) | 2022-04-19 | — | — | US | disclosed |
| CN-109671770-B | Heterojunction bipolar transistor structure with energy gap gradually-changed hole blocking layer | 全新光电科技股份有限公司 | 2022-04-05 | — | — | CN | disclosed |
| EP-0093569-B1 | A METHOD OF LIQUID PHASE EPITAXIAL GROWTH | FUJITSU LIMITED (JP) | 1988-11-02 | — | — | EP | disclosed |
| JP-S6381989-A | MATERIALS FOR LIGHT EMITTING ELEMENT AND MANUFACTURE THEREOF | SUKEGAWA TOKUZO | 1988-04-12 | — | — | JP | disclosed |
| US-4498937-A | INDIUM, GALLIUM, ARSENIC AND PHOSPHOROUS COMPONENTS | FUJITSU LIMITED (JP) | 1985-02-12 | — | — | US | disclosed |
| EP-0093569-A1 | A method of liquid phase epitaxial growth | FUJITSU LIMITED (JP) | 1983-11-09 | — | — | EP | disclosed |
| US-4395727-A | Barrier-free, low-resistant electrical contact on III-V semiconductor material | SIEMENS AKTIENGESELLSCHAFT (DE) | 1983-07-26 | — | — | US | disclosed |