⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10426231 | 0.89 | — | — | |
| SCHEMBL6009591 | 0.87 | — | — | |
| SCHEMBL54884 | 0.87 | — | — | |
| SCHEMBL496227 | 0.75 | — | — | |
| SCHEMBL2176864 | 0.75 | — | — | |
| SCHEMBL2288941 | 0.75 | — | — | |
| SCHEMBL50133 | 0.75 | — | — | |
| SCHEMBL937425 | 0.75 | — | — | |
| SCHEMBL524505 | 0.75 | — | — | |
| SCHEMBL6793898 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 78 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4182975-A1 | METHOD FOR PRODUCING AN LED AND LED PRODUCED BY SAID METHOD | Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR) | 2023-05-24 | — | — | EP | claimed |
| US-20100090860-A1 | Low Power LED Visual Messaging Device, System and Method | INOVA SOLUTIONS, INC. | 2010-04-15 | — | — | US | claimed |
| US-7633405-B2 | Low power LED visual messaging device, system and method | INOVA SOLUTIONS, INC. (US) | 2009-12-15 | — | — | US | claimed |
| US-20070115273-A1 | Low power LED visual messaging device, system and method | INOVA SOLUTIONS, INC. | 2007-05-24 | — | — | US | claimed |
| US-20070115208-A1 | Low power LED visual messaging device, system and method | INOVA SOLUTIONS, INC. | 2007-05-24 | — | — | US | claimed |
| EP-0458409-B1 | Radiation-emitting semiconductor device and method of manufacturing same | UNIPHASE OPTO HOLDINGS INC (US) | 2002-02-20 | — | — | EP | claimed |
| EP-0458408-B1 | Radiation-emitting semiconductor device and method of manufacturing such a semiconductor device | UNIPHASE OPTO HOLDINGS INC (US) | 1999-09-08 | — | — | EP | claimed |
| EP-0571021-B1 | Optoelectronic semiconductor device | PHILIPS ELECTRONICS NV (NL) | 1997-08-06 | — | — | EP | claimed |
| EP-0544357-B1 | Radiation-emitting semiconductor diode | PHILIPS ELECTRONICS NV (NL) | 1996-09-04 | — | — | EP | claimed |
| US-5468975-A | Optoelectronic semiconductor device | U.S. PHILIPS CORPORATION (US) | 1995-11-21 | — | — | US | claimed |
| US-5358897-A | Providing on gallium arsenide substrate, aluminum gallium arsenide buffer layer, indium aluminum gallium phosphide cladding layer, indium gallium phosphide active layer and second indium aluminum gallium phosphide cladding layer | U.S. PHILIPS CORPORATION (US) | 1994-10-25 | — | — | US | claimed |
| US-5296717-A | Multilayer diodes with buffer layers, cladding layers and active layers with aluminum, gallium arsenic and phosphorous | U.S. PHILIPS CORPORATION (US) | 1994-03-22 | — | — | US | claimed |
| EP-0390262-B1 | Radiation-emitting semiconductor device and method of manufacturing such a semiconductor device | PHILIPS NV (NL) | 1993-12-01 | — | — | EP | claimed |
| EP-0571021-A1 | Optoelectronic semiconductor device | Koninklijke Philips Electronics N.V. (NL) | 1993-11-24 | — | — | EP | claimed |
| US-5204869-A | RADIATION-EMITTING SEMICONDUCTOR DEVICE HAVING EMISSION IN THE VISIBLE RANGE AND A HIGH MAXIMUM OPERATING TEMPERATURE | U.S. PHILIPS CORP. (US) | 1993-04-20 | — | — | US | claimed |
| EP-0458409-A1 | Radiation-emitting semiconductor device and method of manufacturing same | Koninklijke Philips Electronics N.V. (NL) | 1991-11-27 | — | — | EP | claimed |
| EP-0458408-A1 | Radiation-emitting semiconductor device and method of manufacturing such a semiconductor device | Koninklijke Philips Electronics N.V. (NL) | 1991-11-27 | — | — | EP | claimed |
| US-4971928-A | Method of making a light emitting semiconductor having a rear reflecting surface | GENERAL MOTORS CORPORATION (US) | 1990-11-20 | — | — | US | claimed |
| EP-0390262-A1 | Radiation-emitting semiconductor device and method of manufacturing such a semiconductor device | Koninklijke Philips Electronics N.V. (NL) | 1990-10-03 | — | — | EP | claimed |
| WO-2024129842-A1 | SEGMENTED SAPPHIRE LED WITH IMPROVED LUMINANCE CONFINEMENT | LUMILEDS LLC (US) | 2024-06-20 | — | — | WO | disclosed |
| CN-116632131-A | Optoelectronic device with sub-wavelength anti-reflective structure, related screen and method of manufacture | 法国原子能及替代能源委员会 | 2023-08-22 | — | — | CN | disclosed |
| EP-4182975-A1 | METHOD FOR PRODUCING AN LED AND LED PRODUCED BY SAID METHOD | Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR) | 2023-05-24 | — | — | EP | disclosed |
| EP-3929634-B1 | LIGHT-EMITTING DEVICE, PIXEL COMPRISING A PLURALITY OF SUCH DEVICES, PIXEL MATRIX AND ASSOCIATED MANUFACTURING METHODS | COMMISSARIAT ENERGIE ATOMIQUE (FR) | 2023-03-22 | — | — | EP | disclosed |
| CN-114127966-A | Illumination unit, method for producing an illumination unit, conversion element for an optoelectronic component, radiation source with a light-emitting diode and a conversion element, coupling-out structure and optoelectronic device | 奥斯兰姆奥普托半导体股份有限两合公司 | 2022-03-01 | — | — | CN | disclosed |
| EP-3929634-A1 | LIGHT-EMITTING DEVICE, PIXEL COMPRISING A PLURALITY OF SUCH DEVICES, PIXEL MATRIX AND ASSOCIATED MANUFACTURING METHODS | Commissariat à l'Energie Atomique et aux Energies Alternatives (FR) | 2021-12-29 | — | — | EP | disclosed |
| EP-3150352-B1 | SEMICONDUCTOR PACKAGE | NICHIA CORP (JP) | 2020-04-22 | — | — | EP | disclosed |
| EP-2211386-B1 | Light source apparatus and head-up display apparatus incorporating the light source apparatus | OKI DATA KK (JP) | 2019-10-16 | — | — | EP | disclosed |
| EP-2757599-B1 | Light emitting device and its method of manufacture | NICHIA CORP (JP) | 2019-10-02 | — | — | EP | disclosed |
| US-10072817-B2 | Using white LEDs to enhance intensity of colored light from colored LEDs | SWS WARNING SYSTEMS INC. (CA) | 2018-09-11 | — | — | US | disclosed |
| US-9917421-B2 | P-type isolation regions adjacent to semiconductor laser facets | THORLABS QUANTUM ELECTRONICS, INC. (US) | 2018-03-13 | — | — | US | disclosed |
| US-20170284630-A1 | USING WHITE LEDS TO ENHANCE INTENSITY OF COLORED LIGHT FROM COLORED LEDS | SWS WARNING SYSTEMS INC. (CA) | 2017-10-05 | — | — | US | disclosed |
| EP-3150352-A1 | SEMICONDUCTOR PACKAGE | NICHIA CORPORATION (JP) | 2017-04-05 | — | — | EP | disclosed |
| EP-2082858-B1 | Metal mold for injection molding and semiconductor package formed therewith and method of manufacturing semiconductor package | NICHIA CORP (JP) | 2016-10-12 | — | — | EP | disclosed |
| US-9236947-B2 | Fast thin-film light emitting diode | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (SG) | 2016-01-12 | — | — | US | disclosed |
| US-9202999-B2 | Light emitting device and its method of manufacture | NICHIA CORPORATION (JP) | 2015-12-01 | — | — | US | disclosed |
| EP-2686922-B1 | MULTI-SECTION QUANTUM CASCADE LASER WITH P-TYPE ISOLATION REGIONS | CORNING INC (US) | 2015-09-09 | — | — | EP | disclosed |
| EP-2686921-B1 | P-TYPE ISOLATION REGIONS ADJACENT TO FACETS OF SEMICONDUCTOR QUANTUM CASCADE LASER | CORNING INC (US) | 2015-09-09 | — | — | EP | disclosed |
| US-9029239-B2 | Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction | SANDIA CORPORATION (US) | 2015-05-12 | — | — | US | disclosed |
| US-20150063829-A1 | FAST THIN-FILM LIGHT EMITTING DIODE | AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (SG) | 2015-03-05 | — | — | US | disclosed |
| US-20140203305-A1 | LIGHT EMITTING DEVICE AND ITS METHOD OF MANUFACTURE | NICHIA CORPORATION (JP) | 2014-07-24 | — | — | US | disclosed |
| EP-2757599-A1 | Light emitting device and its method of manufacture | Nichia Corporation (JP) | 2014-07-23 | — | — | EP | disclosed |
| US-20140175495-A1 | DIE BONDING METHOD AND DIE BONDING STRUCTURE OF LIGHT EMITTING DIODE PACKAGE | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (TW) | 2014-06-26 | — | — | US | disclosed |
| US-20140048123-A1 | SEPARATING SEMICONDUCTOR DEVICES FROM SUBSTRATE BY ETCHING GRADED COMPOSITION RELEASE LAYER DISPOSED BETWEEN SEMICONDUCTOR DEVICES AND SUBSTRATE INCLUDING FORMING PROTUBERANCES THAT REDUCE STICTION | SANDIA CORPORATION (US) | 2014-02-20 | — | — | US | disclosed |
| EP-2686922-A1 | MULTI - SECTION QUANTUM CASCADE LASER WITH P-TYPE ISOLATION REGIONS | Corning Incorporated (US) | 2014-01-22 | — | — | EP | disclosed |
| EP-2686921-A1 | P-TYPE ISOLATION REGIONS ADJACENT TO FACETS OF SEMICONDUCTOR QUANTUM CASCADE LASER | Corning Incorporated (US) | 2014-01-22 | — | — | EP | disclosed |
| US-8514902-B2 | P-type isolation between QCL regions | CORNING INCORPORATED (US) | 2013-08-20 | — | — | US | disclosed |
| US-8421710-B2 | Light source apparatus and head-up display apparatus incorporating the light source apparatus | OKI DATA CORPORATION (JP) | 2013-04-16 | — | — | US | disclosed |
| US-20120236889-A1 | P-TYPE ISOLATION BETWEEN QCL REGIONS | THORLABS QUANTUM ELECTRONICS, INC. | 2012-09-20 | — | — | US | disclosed |
| US-20120236890-A1 | P-TYPE ISOLATION REGIONS ADJACENT TO SEMICONDUCTOR LASER FACETS | THORLABS QUANTUM ELECTRONICS, INC. | 2012-09-20 | — | — | US | disclosed |
| WO-2012125299-A1 | P-TYPE ISOLATION REGIONS ADJACENT TO FACETS OF SEMICONDUCTOR QUANTUM CASCADE LASER | CORNING INCORPORATED (US) | 2012-09-20 | — | — | WO | disclosed |
| WO-2012125398-A1 | MULTI - SECTION QUANTUM CASCADE LASER WITH P-TYPE ISOLATION REGIONS | CORNING INCORPORATED (US) | 2012-09-20 | — | — | WO | disclosed |
| US-8174838-B2 | Display device allowing repeated removal and installation of screw | NICHIA CORPORATION (JP) | 2012-05-08 | — | — | US | disclosed |
| US-7982698-B2 | Low power LED visual messaging device, system and method | INOVA SOLUTIONS, INC. (US) | 2011-07-19 | — | — | US | disclosed |
| US-20100188720-A1 | Light source apparatus and head-up display apparatus incorporating the light source apparatus | OKI DATA CORPORATION (JP) | 2010-07-29 | — | — | US | disclosed |
| EP-2211386-A2 | Light source apparatus and head-up display apparatus incorporating the light source apparatus | Oki Data Corporation (JP) | 2010-07-28 | — | — | EP | disclosed |
| US-7719012-B2 | Light-emitting device and image reading apparatus | NIPPON SHEET GLASS COMPANY, LIMITED (JP) | 2010-05-18 | — | — | US | disclosed |
| US-20100090860-A1 | Low Power LED Visual Messaging Device, System and Method | INOVA SOLUTIONS, INC. | 2010-04-15 | — | — | US | disclosed |
| US-7633405-B2 | Low power LED visual messaging device, system and method | INOVA SOLUTIONS, INC. (US) | 2009-12-15 | — | — | US | disclosed |
| US-20090268416-A1 | DISPLAY DEVICE ALLOWING REPEATED REMOVAL AND INSTALLATION OF SCREW | NICHIA CORPORATION (JP) | 2009-10-29 | — | — | US | disclosed |
| EP-2082858-A1 | Metal mold for injection molding and semiconductor package formed therewith and method of manufacturing semiconductor package | Nichia Corporation (JP) | 2009-07-29 | — | — | EP | disclosed |
| US-20080106887-A1 | LIGHT SOURCE COMPRISING A LIGHT-EXCITABLE MEDIUM | TIR TECHNOLOGY LP (CA) | 2008-05-08 | — | — | US | disclosed |
| WO-2008052318-A1 | LIGHT SOURCE COMPRISING A LIGHT-EXCITABLE MEDIUM | TIR TECHNOLOGY LP (CA) | 2008-05-08 | — | — | WO | disclosed |
| US-20070115273-A1 | Low power LED visual messaging device, system and method | INOVA SOLUTIONS, INC. | 2007-05-24 | — | — | US | disclosed |
| US-20070115208-A1 | Low power LED visual messaging device, system and method | INOVA SOLUTIONS, INC. | 2007-05-24 | — | — | US | disclosed |
| US-20060214879-A1 | Light-emitting device and image reading apparatus | NIPPON SHEET GLASS COMPANY, LIMITED (JP) | 2006-09-28 | — | — | US | disclosed |
| US-6560259-B1 | Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity | APPLIED OPTOELECTRONICS, INC. | 2003-05-06 | — | — | US | disclosed |
| EP-0810590-B1 | Optical data storage system with multiple rewritable phase-change recording layers | IBM (US) | 2003-03-12 | — | — | EP | disclosed |
| EP-0458409-B1 | Radiation-emitting semiconductor device and method of manufacturing same | UNIPHASE OPTO HOLDINGS INC (US) | 2002-02-20 | — | — | EP | disclosed |
| US-5761188-A | Optical data storage system with multiple rewritable phase change recording layers | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1998-06-02 | — | — | US | disclosed |
| EP-0810590-A2 | Optical data storage system with multiple rewritable phase-change recording layers | International Business Machines Corporation (US) | 1997-12-03 | — | — | EP | disclosed |
| EP-0571021-B1 | Optoelectronic semiconductor device | PHILIPS ELECTRONICS NV (NL) | 1997-08-06 | — | — | EP | disclosed |
| US-5468975-A | Optoelectronic semiconductor device | U.S. PHILIPS CORPORATION (US) | 1995-11-21 | — | — | US | disclosed |
| US-5358897-A | Providing on gallium arsenide substrate, aluminum gallium arsenide buffer layer, indium aluminum gallium phosphide cladding layer, indium gallium phosphide active layer and second indium aluminum gallium phosphide cladding layer | U.S. PHILIPS CORPORATION (US) | 1994-10-25 | — | — | US | disclosed |
| US-5296717-A | Multilayer diodes with buffer layers, cladding layers and active layers with aluminum, gallium arsenic and phosphorous | U.S. PHILIPS CORPORATION (US) | 1994-03-22 | — | — | US | disclosed |
| EP-0390262-B1 | Radiation-emitting semiconductor device and method of manufacturing such a semiconductor device | PHILIPS NV (NL) | 1993-12-01 | — | — | EP | disclosed |
| EP-0571021-A1 | Optoelectronic semiconductor device | Koninklijke Philips Electronics N.V. (NL) | 1993-11-24 | — | — | EP | disclosed |
| EP-0458409-A1 | Radiation-emitting semiconductor device and method of manufacturing same | Koninklijke Philips Electronics N.V. (NL) | 1991-11-27 | — | — | EP | disclosed |
| EP-0390262-A1 | Radiation-emitting semiconductor device and method of manufacturing such a semiconductor device | Koninklijke Philips Electronics N.V. (NL) | 1990-10-03 | — | — | EP | disclosed |
| EP-0390262-A1 | Radiation-emitting semiconductor device and method of manufacturing such a semiconductor device | Koninklijke Philips Electronics N.V. (NL) | 1990-10-03 | — | — | EP | disclosed |