SCHEMBL5494092

SCHEMBL5494092

O=[C]CCC1CC2C=CC1C2

nearest known ligand 0.40

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 10/20 0.40
ALDH1A1 P00352 3/20 0.40
TSHR P16473 1/20 0.35
TDP1 Q9NUW8 3/20 0.33
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
HTT P42858 1/20 0.33
LMNA P02545 1/20 0.32
EPHX2 P34913 2/20 0.31
PKM P14618 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1012047 0.80 KDM4E (0.48) KDM4EALDH1A1TSHRTDP1MEN1
SCHEMBL3869621 0.80 KDM4E (0.40) KDM4EALDH1A1TSHRTDP1MEN1
SCHEMBL339490 0.79 KDM4E (0.42) KDM4EALDH1A1TSHRTDP1MEN1
SCHEMBL19689468 0.76 KDM4E (0.46) KDM4EALDH1A1TSHRTDP1MEN1
SCHEMBL1975023 0.76 KDM4E (0.46) KDM4EALDH1A1TSHRTDP1MEN1
SCHEMBL30996063 0.74 KDM4E (0.44) KDM4EALDH1A1TSHRTDP1MEN1
SCHEMBL4445579 0.74 KDM4E (0.44) KDM4EALDH1A1TSHRTDP1MEN1
SCHEMBL3871315 0.73 KDM4E (0.38) KDM4EALDH1A1TSHRMEN1KMT2A
SCHEMBL12112124 0.72 KDM4E (0.43) KDM4EALDH1A1TSHRTDP1MEN1
SCHEMBL17311933 0.72 KDM4E (0.43) KDM4EALDH1A1TSHRTDP1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7232639-B2 Monomer having fluorine-containing acetal or ketal structure, polymer thereof, and chemical-amplification-type resist composition as well as process for formation of pattern with use of the same NEC CORPORATION (JP) 2007-06-19 US disclosed
US-20050164119-A1 Monomer having fluorine-containing acetalor ketal structure, polymer thereof, and chemical-amplification-type resist composition as well as process for formation of pattern with use of the same NEC CORPORATION (JP) 2005-07-28 US disclosed