Valeric Acid

Valeric Acid

SCHEMBL5570495

CCCCC(=O)[O-].CCCCC[N+](C)(CCCCC)CCCCC

nearest known ligand 0.64

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Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
BBOX1 O75936 4/20 0.64
CA1 P00915 1/20 0.64
FABP3 P05413 7/20 0.50
NFKB1 P19838 1/20 0.48
FFAR3 O14843 1/20 0.46
HDAC3 O15379 1/20 0.46
HDAC1 Q13547 1/20 0.46
HDAC2 Q92769 1/20 0.46
HDAC8 Q9BY41 1/20 0.46
CES2 O00748 1/20 0.46
CES1 P23141 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Valeric Acid SCHEMBL5573605 0.98 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2
Valeric Acid SCHEMBL5574439 0.98 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2
Valeric Acid SCHEMBL5574372 0.98 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2
Valeric Acid SCHEMBL5575016 0.98 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2
Hexanoate SCHEMBL5574254 0.96 BBOX1 (0.64) BBOX1CA1FABP3NFKB1CES2
Octanoic Acid SCHEMBL5573652 0.94 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2
SCHEMBL5175087 0.94 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2
Nonanoate SCHEMBL5343930 0.94 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2
Decanoic Acid SCHEMBL5574405 0.94 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2
Decanoic Acid SCHEMBL5574383 0.94 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed