Butyric Acid

Butyric Acid

SCHEMBL5571479

CCC(C)(C)N.CCCC(=O)O

nearest known ligand 0.65

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FFAR3 O14843 1/20 0.65
HDAC3 O15379 1/20 0.65
HDAC1 Q13547 1/20 0.65
HDAC2 Q92769 1/20 0.65
HDAC8 Q9BY41 1/20 0.65
ALDH1A1 P00352 3/20 0.50
KMT2A Q03164 3/20 0.50
MEN1 O00255 2/20 0.50
CYP1A2 P05177 1/20 0.50
THRB P10828 1/20 0.50
AKR1B1 P15121 1/20 0.44
GPR84 Q9NQS5 7/20 0.42
PPARG P37231 7/20 0.42
PPARD Q03181 7/20 0.42
PPARA Q07869 7/20 0.42
HDAC11 Q96DB2 5/20 0.42
TSHR P16473 4/20 0.42
PTPN1 P18031 3/20 0.42
TLR2 O60603 2/20 0.42
TDP1 Q9NUW8 2/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Butyric Acid SCHEMBL25368528 0.98 FFAR3 (0.62) FFAR3HDAC3HDAC1HDAC2HDAC8
Succinic Acid SCHEMBL13724115 0.90 ALDH1A1 (0.54) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL27520533 0.90 FFAR3 (0.72) FFAR3HDAC3HDAC1HDAC2HDAC8
Deanol SCHEMBL11695057 0.88 FFAR3 (0.62) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL28032995 0.87 FFAR3 (0.68) FFAR3HDAC3HDAC1HDAC2HDAC8
Valeric Acid SCHEMBL5574965 0.86 AKR1B1 (0.58) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL28323958 0.85 FFAR3 (0.65) FFAR3HDAC3HDAC1HDAC2HDAC8
Hexanoate SCHEMBL5571779 0.84 AKR1B1 (0.70) ALDH1A1KMT2AMEN1CYP1A2AKR1B1
Propionic Acid SCHEMBL5571646 0.81 FFAR3 (0.59) FFAR3HDAC3HDAC1HDAC2HDAC8
Butyric Acid SCHEMBL5574351 0.81 FFAR3 (0.59) FFAR3HDAC3HDAC1HDAC2HDAC8

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed