Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 1/20 | 0.62 |
| ▸ | FABP3 | P05413 | 7/20 | 0.59 |
| ▸ | CES2 | O00748 | 4/20 | 0.54 |
| ▸ | CES1 | P23141 | 4/20 | 0.54 |
| ▸ | BBOX1 | O75936 | 2/20 | 0.52 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.52 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Dodecanoate SCHEMBL5153789 | 0.98 | FABP3 (0.62) | CA1FABP3CES2CES1BBOX1 | |
| Stearic Acid SCHEMBL867328 | 0.98 | FABP3 (0.62) | CA1FABP3CES2CES1BBOX1 | |
| Behenic Acid SCHEMBL5679682 | 0.98 | FABP3 (0.62) | CA1FABP3CES2CES1BBOX1 | |
| Decanoic Acid SCHEMBL5571660 | 0.98 | FABP3 (0.62) | CA1FABP3CES2CES1BBOX1 | |
| Nonanoate SCHEMBL5875028 | 0.98 | FABP3 (0.62) | CA1FABP3CES2CES1BBOX1 | |
| Palmitic Acid SCHEMBL5153293 | 0.98 | FABP3 (0.62) | CA1FABP3CES2CES1BBOX1 | |
| Heptanoate SCHEMBL5874922 | 0.98 | FABP3 (0.62) | CA1FABP3CES2CES1BBOX1 | |
| Octanoic Acid SCHEMBL5574283 | 0.98 | FABP3 (0.62) | CA1FABP3CES2CES1BBOX1 | |
| Myristic Acid SCHEMBL5153714 | 0.98 | FABP3 (0.62) | CA1FABP3CES2CES1BBOX1 | |
| Tetrylammonium SCHEMBL5574992 | 0.93 | CA1 (0.73) | CA1FABP3CES2CES1BBOX1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20070135565-A1 | COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-7132473-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2006-11-07 | — | — | US | disclosed |
| US-7128976-B2 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2006-10-31 | — | — | US | disclosed |
| EP-1568744-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-31 | — | — | EP | disclosed |
| US-20040219372-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-04 | — | — | US | disclosed |
| US-20030091838-A1 | Composition for film formation, method of film formation, and silica-based film | JSR CORPORATION (JP) | 2003-05-15 | — | — | US | disclosed |