Tetrylammonium

Tetrylammonium

SCHEMBL5574992

CCCCC(=O)[O-].CC[N+](CC)(CC)CC

nearest known ligand 0.73

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Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.73
BBOX1 O75936 2/20 0.54
FFAR3 O14843 2/20 0.52
HDAC3 O15379 2/20 0.52
HDAC1 Q13547 2/20 0.52
HDAC2 Q92769 2/20 0.52
HDAC8 Q9BY41 2/20 0.52
CES1 P23141 2/20 0.52
CES2 O00748 1/20 0.52
FABP3 P05413 6/20 0.50
NFKB1 P19838 1/20 0.48

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetrylammonium SCHEMBL5571730 0.93 CA1 (0.62) CA1BBOX1CES1CES2FABP3
Myristic Acid SCHEMBL5153714 0.91 FABP3 (0.62) CA1BBOX1CES1CES2FABP3
Palmitic Acid SCHEMBL5153293 0.91 FABP3 (0.62) CA1BBOX1CES1CES2FABP3
Stearic Acid SCHEMBL867328 0.91 FABP3 (0.62) CA1BBOX1CES1CES2FABP3
Nonanoate SCHEMBL5875028 0.91 FABP3 (0.62) CA1BBOX1CES1CES2FABP3
Behenic Acid SCHEMBL5679682 0.91 FABP3 (0.62) CA1BBOX1CES1CES2FABP3
Decanoic Acid SCHEMBL5571660 0.91 FABP3 (0.62) CA1BBOX1CES1CES2FABP3
Heptanoate SCHEMBL5874922 0.91 FABP3 (0.62) CA1BBOX1CES1CES2FABP3
Octanoic Acid SCHEMBL5574283 0.91 FABP3 (0.62) CA1BBOX1CES1CES2FABP3
Dodecanoate SCHEMBL5153789 0.91 FABP3 (0.62) CA1BBOX1CES1CES2FABP3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed
EP-0178913-B1 PREPARING GLYCOL MONOESTERS EXXON RESEARCH AND ENGINEERING COMPANY (US) 1991-03-06 EP disclosed
US-4762630-A ALKYLAMMONIUM SALT OF ALIPHATIC, SATURATED MONOCARBOXYLIC ACID NIPPON CHEMI-CON CORPORATION (JP) 1988-08-09 US disclosed
EP-0178913-A2 Preparing glycol monoesters EXXON RESEARCH AND ENGINEERING COMPANY (US) 1986-04-23 EP disclosed
US-4192814-A Process for catalytic conversion of thallium (I) to thallium (III) HALCON RESEARCH & DEVELOPMENT CORPORATION (US) 1980-03-11 US disclosed