Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 1/20 | 0.61 |
| ▸ | DNM1 | Q05193 | 6/20 | 0.60 |
| ▸ | APAF1 | O14727 | 1/20 | 0.56 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.56 |
| ▸ | RAD52 | P43351 | 1/20 | 0.56 |
| ▸ | FABP3 | P05413 | 6/20 | 0.53 |
| ▸ | BBOX1 | O75936 | 2/20 | 0.52 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Valeric Acid SCHEMBL5574322 | 1.00 | CA1 (0.61) | CA1DNM1APAF1HSP90AA1RAD52 | |
| Valeric Acid SCHEMBL5573632 | 1.00 | CA1 (0.61) | CA1DNM1APAF1HSP90AA1RAD52 | |
| Valeric Acid SCHEMBL5571788 | 1.00 | CA1 (0.61) | CA1DNM1APAF1HSP90AA1RAD52 | |
| Valeric Acid SCHEMBL5574301 | 1.00 | CA1 (0.61) | CA1DNM1APAF1HSP90AA1RAD52 | |
| Valeric Acid SCHEMBL5574325 | 0.98 | CA1 (0.64) | CA1DNM1APAF1HSP90AA1RAD52 | |
| Adipic Acid SCHEMBL8163652 | 0.96 | DNM1 (0.60) | CA1DNM1APAF1HSP90AA1RAD52 | |
| Octanoic Acid SCHEMBL5574961 | 0.96 | DNM1 (0.60) | CA1DNM1APAF1HSP90AA1RAD52 | |
| Decanoic Acid SCHEMBL5574353 | 0.96 | DNM1 (0.60) | CA1DNM1APAF1HSP90AA1RAD52 | |
| Decanoic Acid SCHEMBL5573592 | 0.96 | DNM1 (0.60) | CA1DNM1APAF1HSP90AA1RAD52 | |
| Decanoic Acid SCHEMBL5573560 | 0.96 | DNM1 (0.60) | CA1DNM1APAF1HSP90AA1RAD52 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20070135565-A1 | COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-7132473-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2006-11-07 | — | — | US | disclosed |
| EP-1568744-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-31 | — | — | EP | disclosed |
| US-20040219372-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-04 | — | — | US | disclosed |