Hexanoate

Hexanoate

SCHEMBL5573541

CCCCCC(=O)[O-].CCCCCCC[N+](C)(C)C

nearest known ligand 0.69

Full drug profile on Sugi Atlas →

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 6/20 0.60
FABP3 P05413 6/20 0.58
CA1 P00915 1/20 0.56
APAF1 O14727 1/20 0.56
HSP90AA1 P07900 1/20 0.56
RAD52 P43351 1/20 0.56
CES2 O00748 2/20 0.52
CES1 P23141 2/20 0.52

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Adipic Acid SCHEMBL17435040 1.00 DNM1 (0.60) DNM1FABP3CA1APAF1HSP90AA1
Decanoic Acid SCHEMBL5573520 1.00 DNM1 (0.60) DNM1FABP3CA1APAF1HSP90AA1
Octanoic Acid SCHEMBL5574961 1.00 DNM1 (0.60) DNM1FABP3CA1APAF1HSP90AA1
Decanoic Acid SCHEMBL5574353 1.00 DNM1 (0.60) DNM1FABP3CA1APAF1HSP90AA1
Decanoic Acid SCHEMBL5573560 1.00 DNM1 (0.60) DNM1FABP3CA1APAF1HSP90AA1
Adipic Acid SCHEMBL8163652 1.00 DNM1 (0.60) DNM1FABP3CA1APAF1HSP90AA1
Stearic Acid SCHEMBL4942597 1.00 DNM1 (0.60) DNM1FABP3CA1APAF1HSP90AA1
Hexanoate SCHEMBL5574315 1.00 DNM1 (0.60) DNM1FABP3CA1APAF1HSP90AA1
Decanoic Acid SCHEMBL5573592 1.00 DNM1 (0.60) DNM1FABP3CA1APAF1HSP90AA1
Decanoic Acid SCHEMBL5571604 1.00 DNM1 (0.60) DNM1FABP3CA1APAF1HSP90AA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed