Octanoic Acid

Octanoic Acid

SCHEMBL5573556

CCCCCCCC(=O)[O-].CCCC[N+](C)(C)C

nearest known ligand 0.69

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Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
FABP3 P05413 6/20 0.58
CA1 P00915 1/20 0.56
DNM1 Q05193 6/20 0.54
CES2 O00748 3/20 0.52
CES1 P23141 3/20 0.52

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Decanoic Acid SCHEMBL5570452 1.00 FABP3 (0.58) FABP3CA1DNM1CES2CES1
Hexanoate SCHEMBL5571735 0.98 CA1 (0.58) FABP3CA1DNM1CES2CES1
Decanoic Acid SCHEMBL5573560 0.96 DNM1 (0.60) FABP3CA1DNM1CES2CES1
Stearic Acid SCHEMBL4942597 0.96 DNM1 (0.60) FABP3CA1DNM1CES2CES1
Decanoic Acid SCHEMBL5573520 0.96 DNM1 (0.60) FABP3CA1DNM1CES2CES1
Adipic Acid SCHEMBL8163652 0.96 DNM1 (0.60) FABP3CA1DNM1CES2CES1
Decanoic Acid SCHEMBL5574353 0.96 DNM1 (0.60) FABP3CA1DNM1CES2CES1
Decanoic Acid SCHEMBL5573592 0.96 DNM1 (0.60) FABP3CA1DNM1CES2CES1
Octanoic Acid SCHEMBL5574961 0.96 DNM1 (0.60) FABP3CA1DNM1CES2CES1
Hexanoate SCHEMBL5574315 0.96 DNM1 (0.60) FABP3CA1DNM1CES2CES1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed