Decanoic Acid

Decanoic Acid

SCHEMBL5573588

CCCCCCCCCC(=O)[O-].CCC[N+](C)(CCC)CCC

nearest known ligand 0.69

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Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
FABP3 P05413 7/20 0.58
BBOX1 O75936 2/20 0.57
CA1 P00915 1/20 0.56
CES2 O00748 4/20 0.52
CES1 P23141 4/20 0.52
NFKB1 P19838 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Octanoic Acid SCHEMBL5575046 1.00 FABP3 (0.58) FABP3BBOX1CA1CES2CES1
Hexanoate SCHEMBL5574251 0.98 BBOX1 (0.59) FABP3BBOX1CA1CES2CES1
Stearic Acid SCHEMBL5372511 0.92 BBOX1 (0.62) FABP3BBOX1CA1CES2CES1
Decanoic Acid SCHEMBL5574383 0.92 BBOX1 (0.62) FABP3BBOX1CA1CES2CES1
Octanoic Acid SCHEMBL5575039 0.92 BBOX1 (0.62) FABP3BBOX1CA1CES2CES1
Octanoic Acid SCHEMBL5574288 0.92 BBOX1 (0.62) FABP3BBOX1CA1CES2CES1
SCHEMBL5175087 0.92 BBOX1 (0.62) FABP3BBOX1CA1CES2CES1
Octanoic Acid SCHEMBL5573652 0.92 BBOX1 (0.62) FABP3BBOX1CA1CES2CES1
Decanoic Acid SCHEMBL5574405 0.92 BBOX1 (0.62) FABP3BBOX1CA1CES2CES1
Decanoic Acid SCHEMBL5574985 0.92 BBOX1 (0.62) FABP3BBOX1CA1CES2CES1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed