Propionic Acid

Propionic Acid

SCHEMBL5573589

CC(C)C(C)(C)N.CCC(=O)O

nearest known ligand 0.53

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FFAR3 O14843 2/20 0.53
GABRP O00591 2/20 0.37
GABRD O14764 2/20 0.37
GABRA1 P14867 2/20 0.37
GABRB1 P18505 2/20 0.37
GABRG2 P18507 2/20 0.37
GABRB3 P28472 2/20 0.37
GABRA5 P31644 2/20 0.37
GABRA3 P34903 2/20 0.37
GABRA2 P47869 2/20 0.37
GABRB2 P47870 2/20 0.37
GABRA4 P48169 2/20 0.37
GABRE P78334 2/20 0.37
GABRA6 Q16445 2/20 0.37
GABRG1 Q8N1C3 2/20 0.37
GABRG3 Q99928 2/20 0.37
GABRQ Q9UN88 2/20 0.37
CYP1A2 P05177 2/20 0.37
MEN1 O00255 1/20 0.37
ALDH1A1 P00352 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Butyric Acid SCHEMBL5574351 0.83 FFAR3 (0.59) FFAR3GABRPGABRDGABRA1GABRB1
Propionic Acid SCHEMBL5572300 0.83 FFAR3 (0.46) FFAR3GABRPGABRDGABRA1GABRB1
Bicarbonate SCHEMBL1896976 0.83 CYP1A2 (0.39) GABRPGABRDGABRA1GABRB1GABRG2
Bicarbonate SCHEMBL1896980 0.83 CYP1A2 (0.39) GABRPGABRDGABRA1GABRB1GABRG2
Tert-Butylamine SCHEMBL3414252 0.83 FFAR3 (0.67) FFAR3CYP1A2MEN1ALDH1A1THRB
Propionic Acid SCHEMBL28660894 0.80 FFAR3 (0.62) FFAR3CYP1A2MEN1ALDH1A1THRB
Acetic Acid SCHEMBL3691254 0.80 FFAR3 (0.44) FFAR3GABRPGABRDGABRA1GABRB1
Valeric Acid SCHEMBL5574488 0.80 AKR1B1 (0.54) CYP1A2MEN1ALDH1A1KMT2ACYP2D6
Propionic Acid SCHEMBL5571708 0.80 FFAR3 (0.42) FFAR3GABRPGABRDGABRA1GABRB1
SCHEMBL4928121 0.78 CYP1A2 (0.38) CYP1A2MEN1ALDH1A1THRBKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed