Ammonia Solution, Strong

Ammonia Solution, Strong

SCHEMBL5574124

CCCCCCC(CCCCCC)(CCCCCC)OC=O.N

nearest known ligand 0.42

Full drug profile on Sugi Atlas →

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
GGPS1 O95749 7/20 0.42
FDPS P14324 11/20 0.41
SMPD1 P17405 4/20 0.39
LPAR1 Q92633 1/20 0.39
LPAR3 Q9UBY5 1/20 0.39
TSHR P16473 1/20 0.39
EPHX1 P07099 1/20 0.37
ADH1B P00325 1/20 0.37
ADH1C P00326 1/20 0.37
ADH1A P07327 1/20 0.37
ADH4 P08319 1/20 0.37
ADH7 P40394 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11578629 0.98 GGPS1 (0.43) GGPS1FDPSSMPD1LPAR1LPAR3
SCHEMBL15732775 0.98 GGPS1 (0.43) GGPS1FDPSSMPD1LPAR1LPAR3
SCHEMBL28869343 0.98 GGPS1 (0.43) GGPS1FDPSSMPD1LPAR1LPAR3
SCHEMBL24592053 0.94 GGPS1 (0.41) GGPS1FDPSSMPD1LPAR1LPAR3
SCHEMBL28123855 0.94 GGPS1 (0.41) GGPS1FDPSSMPD1LPAR1LPAR3
SCHEMBL28285690 0.87 FDPS (0.38) GGPS1FDPSSMPD1LPAR1LPAR3
SCHEMBL21557351 0.82 EPHX1 (0.39) GGPS1FDPSSMPD1LPAR1LPAR3
SCHEMBL2780150 0.79 FDPS (0.32) GGPS1FDPSSMPD1LPAR1LPAR3
SCHEMBL4671841 0.79 TDP1 (0.41) FDPS
SCHEMBL93198 0.78 GGPS1 (0.42) GGPS1FDPSSMPD1LPAR1LPAR3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed