Known targets — ChEMBL curated mechanism
ADRA2AADRA2BADRA2CADRB2AGTR1AVPR1AAVPR1BAVPR2BDKRB2CALCRCHRNA3CHRNB4ESR1ESR2GHSRGNRHRGSC1HSPA8MALT1MC1RMC4RNOS1NOS2NOS3OPRK1OXTRRAMP1RAMP2RAMP3SCN5ASSTR1SSTR2SSTR3SSTR4SSTR5dacAdacBdacCfolPftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Acetic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DNM1 | Q05193 | 7/20 | 0.68 |
| ▸ | APAF1 | O14727 | 1/20 | 0.62 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.62 |
| ▸ | RAD52 | P43351 | 1/20 | 0.62 |
| ▸ | MEN1 | O00255 | 4/20 | 0.50 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.50 |
| ▸ | ACHE | P22303 | 3/20 | 0.50 |
| ▸ | APEX1 | P27695 | 3/20 | 0.50 |
| ▸ | NFKB1 | P19838 | 2/20 | 0.50 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.50 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.50 |
| ▸ | PMP22 | Q01453 | 2/20 | 0.50 |
| ▸ | LSS | P48449 | 1/20 | 0.50 |
| ▸ | LMNA | P02545 | 1/20 | 0.50 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.50 |
| ▸ | HRH3 | Q9Y5N1 | 1/20 | 0.50 |
| ▸ | TSHR | P16473 | 1/20 | 0.50 |
| ▸ | RAB9A | P51151 | 1/20 | 0.50 |
| ▸ | HTT | P42858 | 1/20 | 0.48 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.48 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Acetic Acid SCHEMBL5574243 | 1.00 | DNM1 (0.68) | DNM1APAF1HSP90AA1RAD52MEN1 | |
| Acetic Acid SCHEMBL5574976 | 1.00 | DNM1 (0.68) | DNM1APAF1HSP90AA1RAD52MEN1 | |
| Acetic Acid SCHEMBL2528308 | 1.00 | DNM1 (0.68) | DNM1APAF1HSP90AA1RAD52MEN1 | |
| Acetic Acid SCHEMBL11125818 | 1.00 | DNM1 (0.68) | DNM1APAF1HSP90AA1RAD52MEN1 | |
| Acetic Acid SCHEMBL11395184 | 1.00 | DNM1 (0.68) | DNM1APAF1HSP90AA1RAD52MEN1 | |
| Acetic Acid SCHEMBL23501563 | 1.00 | DNM1 (0.68) | DNM1APAF1HSP90AA1RAD52MEN1 | |
| Acetic Acid SCHEMBL3394806 | 1.00 | DNM1 (0.68) | DNM1APAF1HSP90AA1RAD52MEN1 | |
| Cetrimonium SCHEMBL241633 | 1.00 | DNM1 (0.68) | DNM1APAF1HSP90AA1RAD52MEN1 | |
| Acetic Acid SCHEMBL534554 | 1.00 | DNM1 (0.68) | DNM1APAF1HSP90AA1RAD52MEN1 | |
| Acetic Acid SCHEMBL28361891 | 1.00 | DNM1 (0.68) | DNM1APAF1HSP90AA1RAD52MEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119998417-A | Emulsion composition of film-forming organopolysiloxane and method for producing same | 信越化学工业株式会社 | 2025-05-13 | — | — | CN | disclosed |
| US-20070135565-A1 | COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-7132473-B2 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2006-11-07 | — | — | US | disclosed |
| EP-1568744-A1 | COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-08-31 | — | — | EP | disclosed |
| US-20040219372-A1 | Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-11-04 | — | — | US | disclosed |