Butyric Acid

Butyric Acid

SCHEMBL5574409

CCCC(=O)[O-].CCCCCCCCC[N+](C)(CCCCCCCCC)CCCCCCCCC

nearest known ligand 0.57

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Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
BBOX1 O75936 2/20 0.57
FFAR3 O14843 2/20 0.56
HDAC3 O15379 2/20 0.56
HDAC1 Q13547 2/20 0.56
HDAC2 Q92769 2/20 0.56
HDAC8 Q9BY41 2/20 0.56
CA1 P00915 1/20 0.50
GPR84 Q9NQS5 1/20 0.50
FABP3 P05413 5/20 0.48
NFKB1 P19838 1/20 0.47
CES2 O00748 3/20 0.46
CES1 P23141 3/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Butyric Acid SCHEMBL5575024 1.00 BBOX1 (0.57) BBOX1FFAR3HDAC3HDAC1HDAC2
Butyric Acid SCHEMBL5574326 1.00 BBOX1 (0.57) BBOX1FFAR3HDAC3HDAC1HDAC2
Butyric Acid SCHEMBL5570465 1.00 BBOX1 (0.57) BBOX1FFAR3HDAC3HDAC1HDAC2
Butyric Acid SCHEMBL5571481 0.98 BBOX1 (0.59) BBOX1FFAR3HDAC3HDAC1HDAC2
Succinic Acid SCHEMBL31139371 0.94 BBOX1 (0.59) BBOX1FFAR3HDAC3HDAC1HDAC2
Decanoic Acid SCHEMBL5574405 0.92 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2
Octanoic Acid SCHEMBL5575039 0.92 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2
Hexanoate SCHEMBL5575026 0.92 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2
Decanoic Acid SCHEMBL5574985 0.92 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2
Decanoic Acid SCHEMBL5574383 0.92 BBOX1 (0.62) BBOX1CA1FABP3NFKB1CES2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed