Tributylmethylammonium

Tributylmethylammonium

SCHEMBL5574972

CCCCCCCCCC(=O)[O-].CCCC[N+](C)(CCCC)CCCC

nearest known ligand 0.69

Full drug profile on Sugi Atlas →

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
BBOX1 O75936 2/20 0.62
FABP3 P05413 7/20 0.58
CA1 P00915 1/20 0.56
CES2 O00748 4/20 0.52
CES1 P23141 4/20 0.52
NFKB1 P19838 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tributylmethylammonium SCHEMBL5573569 1.00 BBOX1 (0.62) BBOX1FABP3CA1CES2CES1
Tributylmethylammonium SCHEMBL5573597 0.98 BBOX1 (0.64) BBOX1FABP3CA1CES2CES1
Tributylmethylammonium SCHEMBL28636529 0.98 BBOX1 (0.64) BBOX1FABP3CA1CES2CES1
Tributylmethylammonium SCHEMBL28636543 0.98 BBOX1 (0.64) BBOX1FABP3CA1CES2CES1
Octanoic Acid SCHEMBL5574288 0.96 BBOX1 (0.62) BBOX1FABP3CA1CES2CES1
Octanoic Acid SCHEMBL5573652 0.96 BBOX1 (0.62) BBOX1FABP3CA1CES2CES1
SCHEMBL5175087 0.96 BBOX1 (0.62) BBOX1FABP3CA1CES2CES1
Decanoic Acid SCHEMBL5574383 0.96 BBOX1 (0.62) BBOX1FABP3CA1CES2CES1
Decanoic Acid SCHEMBL5570456 0.96 BBOX1 (0.62) BBOX1FABP3CA1CES2CES1
Decanoic Acid SCHEMBL5574985 0.96 BBOX1 (0.62) BBOX1FABP3CA1CES2CES1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed