Tetrylammonium

Tetrylammonium

SCHEMBL5574995

CCCCC(=O)O.CC[N+](CC)(CC)CC

nearest known ligand 0.64

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
AKR1B1 P15121 1/20 0.64
GPR84 Q9NQS5 7/20 0.61
PPARG P37231 7/20 0.61
PPARD Q03181 7/20 0.61
PPARA Q07869 7/20 0.61
HDAC11 Q96DB2 5/20 0.61
TSHR P16473 4/20 0.61
PTPN1 P18031 3/20 0.61
FABP4 P15090 3/20 0.61
ALDH1A1 P00352 2/20 0.61
TLR2 O60603 2/20 0.61
TDP1 Q9NUW8 2/20 0.61
KMT2A Q03164 2/20 0.61
ALOX15 P16050 2/20 0.61
HSD17B10 Q99714 2/20 0.61
SLC22A6 Q4U2R8 1/20 0.61
SLC22A8 Q8TCC7 1/20 0.61
MEN1 O00255 1/20 0.61
ESR1 P03372 1/20 0.61
PDE4A P27815 1/20 0.61

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Octanoic Acid SCHEMBL28080472 0.91 GPR84 (0.77) AKR1B1GPR84PPARGPPARDPPARA
Myristic Acid SCHEMBL5153722 0.91 GPR84 (0.77) AKR1B1GPR84PPARGPPARDPPARA
Behenic Acid SCHEMBL5679691 0.91 GPR84 (0.77) AKR1B1GPR84PPARGPPARDPPARA
Palmitic Acid SCHEMBL5153299 0.91 GPR84 (0.77) AKR1B1GPR84PPARGPPARDPPARA
Stearic Acid SCHEMBL5157808 0.91 GPR84 (0.77) AKR1B1GPR84PPARGPPARDPPARA
Adipic Acid SCHEMBL5874738 0.90 AKR1B1 (0.62) AKR1B1GPR84PPARGPPARDPPARA
Tetrylammonium SCHEMBL5875097 0.90 SLC22A6 (0.61) AKR1B1GPR84PPARGPPARDPPARA
Adipic Acid SCHEMBL8538097 0.90 AKR1B1 (0.62) AKR1B1GPR84PPARGPPARDPPARA
Valeric Acid SCHEMBL23121555 0.89
Valeric Acid SCHEMBL3181971 0.89 AKR1B1 (0.78) AKR1B1GPR84PPARGPPARDPPARA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed