SCHEMBL557585

SCHEMBL557585

O=[AlH].[Zr]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2297212 0.89
SCHEMBL28011926 0.89
SCHEMBL29265631 0.89
SCHEMBL5407170 0.89
Water SCHEMBL10659100 0.89
SCHEMBL28365826 0.89
SCHEMBL16243880 0.89
SCHEMBL27996922 0.89
SCHEMBL4349083 0.89
SCHEMBL5447895 0.89

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1769 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260068205-A1 METHOD FOR FORMING SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2026-03-05 US claimed
US-12525485-B2 Gate contact structure TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-01-13 US claimed
US-12495606-B2 Gate isolation structure TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2025-12-09 US claimed
US-12484241-B2 Method for forming semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-11-25 US claimed
US-20250344434-A1 BACKSIDE CONTACT TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-06 US claimed
US-20250329581-A1 SEMICONDUCTOR DEVICE HAVING AIR GAP AND METHOD FOR MANUFACTURING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-10-23 US claimed
US-20250323110-A1 MEMORY CELL SEALANT MATERIAL IN A THREE-DIMENSIONAL MEMORY ARRAY MICRON TECHNOLOGY INC (US) 2025-10-16 US claimed
US-12444674-B2 Back-end-of-line passive device structure TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-10-14 US claimed
US-20250311265-A1 DIELECTRIC ISOLATION STRUCTURE FOR MULTI-GATE TRANSISTORS TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-10-02 US claimed
US-12402407-B2 Gap-insulated semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-08-26 US claimed
US-20050189598-A1 Logic embedded-memory integrated circuits TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2005-09-01 US claimed
US-20050151211-A1 Semiconductor device, and method and apparatus for manufacturing the same FUJITSU LIMITED (JP) 2005-07-14 US claimed
US-6696332-B2 Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing TEXAS INSTRUMENTS INCORPORATED 2004-02-24 US claimed
US-20030116804-A1 Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing TEXAS INSTRUMENTS INCORPORATED 2003-06-26 US claimed
CN-1104287-C Ejector with one or several pockets MAGOTTEAUX INT (BE) 2003-04-02 CN claimed
US-6448192-B1 Method for forming a high dielectric constant material MOTOROLA, INC. 2002-09-10 US claimed
US-6395650-B1 Methods for forming metal oxide layers with enhanced purity INTERNATIONAL BUSINESS MACHINES CORPORATION 2002-05-28 US claimed
CN-1293595-A Ejector with one or more grooves MAGOTTEAUX INT (BE) 2001-05-02 CN claimed
CN-1244912-A Co-compression molding method for producing non-fired or non-coked refractory NORTH AMERICAN REFRACTORY CO (US) 2000-02-16 CN claimed
CN-1019957-C Alumina-zirconia-carbide whisker reinforced cutting tool KENNAMETAL INC (US) 1993-03-03 CN claimed