SCHEMBL559934

SCHEMBL559934

c1ccc(-c2ccc(-c3cccs3)cc2)cc1.c1ccc(-c2ccc(-c3cccs3)cc2)cc1

nearest known ligand 0.59

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 1/20 0.59
CYP3A4 P08684 2/20 0.54
CYP2C9 P11712 2/20 0.54
CYP2E1 P05181 1/20 0.54
CYP2A6 P11509 1/20 0.54
CYP2B6 P20813 1/20 0.54
MAPT P10636 4/20 0.53
KDM4E B2RXH2 3/20 0.53
KCNH2 Q12809 1/20 0.52
CYP17A1 P05093 1/20 0.52
CYP11B1 P15538 1/20 0.52
CYP11B2 P19099 1/20 0.52
ALDH1A1 P00352 3/20 0.48
MEN1 O00255 2/20 0.48
HPGD P15428 2/20 0.48
KMT2A Q03164 2/20 0.48
L3MBTL1 Q9Y468 2/20 0.48
TDP1 Q9NUW8 1/20 0.48
LPL P06858 1/20 0.47
LIPG Q9Y5X9 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7058736 1.00 LTA4H (0.59) LTA4HCYP3A4CYP2C9CYP2E1CYP2A6
SCHEMBL31124 0.95 CYP3A4 (0.58) LTA4HCYP3A4CYP2C9CYP2E1CYP2A6
Hydrochloric Acid SCHEMBL27688178 0.92 CYP3A4 (0.56) LTA4HCYP3A4CYP2C9CYP2E1CYP2A6
Hydrogen Sulfide SCHEMBL27668457 0.92 CYP3A4 (0.56) LTA4HCYP3A4CYP2C9CYP2E1CYP2A6
Ammonia Solution, Strong SCHEMBL28465317 0.92 CYP3A4 (0.56) LTA4HCYP3A4CYP2C9CYP2E1CYP2A6
Hydrochloric Acid SCHEMBL8091091 0.92 CYP3A4 (0.56) LTA4HCYP3A4CYP2C9CYP2E1CYP2A6
SCHEMBL30163538 0.92 CYP3A4 (0.56) LTA4HCYP3A4CYP2C9CYP2E1CYP2A6
SCHEMBL7455134 0.92 LTA4H (0.67) LTA4HCYP3A4CYP2C9CYP2E1CYP2A6
SCHEMBL28398970 0.90 CYP3A4 (0.52) LTA4HCYP3A4CYP2C9CYP2E1CYP2A6
SCHEMBL338810 0.89 LTA4H (0.70) LTA4HCYP3A4CYP2C9CYP2E1CYP2A6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1935027-B1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF SEMICONDUCTOR ENERGY LAB (JP) 2017-06-28 EP disclosed
US-9312393-B2 Transistor having tapered gate electrode SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2016-04-12 US disclosed
US-20140326998-A1 Semiconductor Device and Manufacturing Method Thereof SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 2014-11-06 US disclosed
US-8785990-B2 Semiconductor device including first and second or drain electrodes and manufacturing method thereof SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2014-07-22 US disclosed
US-8362474-B2 Organic field effect transistor and semiconductor device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2013-01-29 US disclosed
US-8222098-B2 Semiconductor device having first and second source and drain electrodes sandwiched between an island-shaped semiconductor film SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2012-07-17 US disclosed
US-20120097964-A1 Semiconductor Device and Manufacturing Method Thereof SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 2012-04-26 US disclosed
US-20120032160-A1 ORGANIC FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2012-02-09 US disclosed
US-8049206-B2 Organic field effect transistor and semiconductor device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2011-11-01 US disclosed
US-20100264420-A1 Semiconductor Device and Manufacturing Method Thereof SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 2010-10-21 US disclosed
US-7749825-B2 Forming a thin transistor with a redundant source of drain electrode SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2010-07-06 US disclosed
EP-1935027-A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Semiconductor Energy Laboratory Co., Ltd. (JP) 2008-06-25 EP disclosed
US-20080099757-A1 Organic field effect transistor and semiconductor device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2008-05-01 US disclosed
WO-2007086534-A1 ORGANIC FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2007-08-02 WO disclosed
WO-2007043493-A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2007-04-19 WO disclosed
US-20070087487-A1 Semiconductor device and manufacturing method thereof SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 2007-04-19 US disclosed