SCHEMBL5617366

SCHEMBL5617366

O=[N+]([O-])[O-].O=[N+]([O-])[O-].O=[N+]([O-])[O-].O=[N+]([O-])[O-].O=[N+]([O-])[O-].O=[N+]([O-])[O-].[SiH4].[W+6]

nearest known ligand 0.67

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.67
KMT2A Q03164 1/20 0.67
CA5A P35218 1/20 0.46
CA5B Q9Y2D0 1/20 0.46
TSHR P16473 3/20 0.39
ALDH1A1 P00352 3/20 0.39
TDP1 Q9NUW8 1/20 0.39
HPGD P15428 1/20 0.36
HIF1A Q16665 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL651429 0.94 MEN1 (0.75) MEN1KMT2ACA5ACA5BTSHR
SCHEMBL5311881 0.88
SCHEMBL5311885 0.88 MEN1 (0.67) MEN1KMT2ACA5ACA5BTSHR
SCHEMBL5617364 0.88
SCHEMBL1476439 0.88 MEN1 (0.67) MEN1KMT2ACA5ACA5BTSHR
SCHEMBL8665742 0.88 MEN1 (0.67) MEN1KMT2ACA5ACA5BTSHR
SCHEMBL31709992 0.87 MEN1 (0.86) MEN1KMT2ACA5ACA5BTSHR
SCHEMBL9093617 0.87 MEN1 (0.86) MEN1KMT2ACA5ACA5BTSHR
SCHEMBL136652 0.87
SCHEMBL14916717 0.87 MEN1 (0.86) MEN1KMT2ACA5ACA5BTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7172269-B2 Resistor shapes for heating devices on an integrated circuit AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD. (SG) 2007-02-06 US disclosed
US-7044823-B2 Method of making a tunneling emitter HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) 2006-05-16 US disclosed
US-6911768-B2 Tunneling emitter with nanohole openings HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) 2005-06-28 US disclosed
US-20050110001-A9 TUNNELING EMITTER WITH NANOHOLE OPENINGS TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMTED (TW) 2005-05-26 US disclosed
US-20050104918-A1 Resistor shapes for heating devices on an integrated circuit AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD. (SG) 2005-05-19 US disclosed
US-20040222729-A1 Tunneling emitter CHEN ZHIZHANG (US) 2004-11-11 US disclosed
US-20040211975-A1 Method of making a tunneling emitter SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-10-28 US disclosed
EP-1384244-B1 TUNNELING EMITTER HEWLETT PACKARD CO (US) 2004-10-27 EP disclosed
US-6806488-B2 Tunneling emitters and method of making HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 2004-10-19 US disclosed
US-6781146-B2 Annealed tunneling emitter HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 2004-08-24 US disclosed
EP-1406284-A2 Tunneling emitter with nanohole openings Hewlett-Packard Development Company, L.P. (US) 2004-04-07 EP disclosed
EP-1384244-A2 TUNNELING EMITTER Hewlett-Packard Company (US) 2004-01-28 EP disclosed
US-20030168956-A1 Tunneling emitters and method of making SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-09-11 US disclosed
US-20030089900-A1 Tunneling emitter with nanohole openings CHEN ZHIZHANG (US) 2003-05-15 US disclosed
EP-1308980-A2 Tunneling emitters and method of making Hewlett-Packard Company (US) 2003-05-07 EP disclosed
US-6558968-B1 Method of making an emitter with variable density photoresist layer HEWLETT-PACKARD DEVELOPMENT COMPANY 2003-05-06 US disclosed
US-20030080330-A1 Method of making an emitter with variable density photoresist layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-05-01 US disclosed
US-20020167001-A1 ANNEALED TUNNELING EMITTER SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-11-14 US disclosed
WO-2002089167-A2 TUNNELING EMITTER HEWLETT-PACKARD COMPANY (US) 2002-11-07 WO disclosed