SCHEMBL563874

SCHEMBL563874

[Au].[Ge]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9436553 1.00
SCHEMBL7788702 0.82
SCHEMBL10960044 0.82
SCHEMBL31404134 0.82
SCHEMBL8907582 0.82
SCHEMBL10614211 0.82
SCHEMBL11196504 0.82
SCHEMBL936744 0.82
SCHEMBL10769328 0.82
SCHEMBL29465839 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2192 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119943760-B CSMD ceramic tube shell with double-sided heat dissipation and low resistance 安徽鸿安信电子科技有限公司 2026-05-15 CN claimed
US-20260088584-A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF TAIWAN ASIA SEMICONDUCTOR CORP (TW) 2026-03-26 US claimed
EP-4716035-A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Taiwan-Asia Semiconductor Corporation (TW) 2026-03-25 EP claimed
US-20260020389-A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF TAIWAN ASIA SEMICONDUCTOR CORP (TW) 2026-01-15 US claimed
US-20260005670-A1 FBAR STRUCTURE HAVING SINGLE CRYSTALLINE PIEZOELECTRIC LAYER AND FABRICATING METHOD THEREOF SHENZHEN NEWSONIC TECH CO LTD (CN) 2026-01-01 US claimed
US-12472588-B2 Manufacturing insulated spherical weld gold wire for integrated circuit double-layer stacked package Shenzhen Zhongbao New Material Technology Co., Ltd. (CN) 2025-11-18 US claimed
US-12433068-B2 LED with ALGAINP window layer QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD (CN) 2025-09-30 US claimed
US-12418165-B2 Capacitive feedthrough for hybrid hermetic modules for space applications THALES ALENIA SPACE ITALIA S.P.A. CON UNICO SOCIO (IT) 2025-09-16 US claimed
US-20250197198-A1 MANUFACTURING PROCESS FOR MICROELECTROMECHANICAL DEVICES HAVING IMPROVED SEALING PERFORMANCE STMICROELECTRONICS INTERNATIONAL N.V. (CH) 2025-06-19 US claimed
EP-4571249-A1 MANUFACTURING PROCESS FOR MICROELECTROMECHANICAL DEVICES HAVING IMPROVED SEALING PERFORMANCE STMicroelectronics International N.V. (CH) 2025-06-18 EP claimed
US-4692993-A Schottky barrier charge coupled device (CCD) manufacture HUGHES ELECTRONICS CORPORATION 1987-09-15 US claimed
US-4665413-A Edge junction schottky diode EATON CORPORATION (US) 1987-05-12 US claimed
US-H170-H Self aligned notch for InP planar transferred electron oscillator UNITED STATES OF AMERICA (US) 1986-12-02 US claimed
US-4613890-A Alloyed contact for n-conducting GaAlAs-semi-conductor material TELEFUNKEN ELECTRONIC GMBH (DE) 1986-09-23 US claimed
US-4499656-A Deep mesa process for fabricating monolithic integrated Schottky barrier diode for millimeter wave mixers SPERRY CORPORATION (US) 1985-02-19 US claimed
US-4312112-A Method of making field-effect transistors with micron and submicron gate lengths EATON CORPORATION (US) 1982-01-26 US claimed
US-4310570-A Field-effect transistors with micron and submicron gate lengths EATON CORPORATION (US) 1982-01-12 US claimed
US-4075650-A MILLIMETER WAVE SEMICONDUCTOR DEVICE CUTLER-HAMMER, INC. (US) 1978-02-21 US claimed
US-3986251-A Germanium doped light emitting diode bonding process MOTOROLA, INC. (US) 1976-10-19 US claimed
US-3941916-A Electronic circuit package and method of brazing BURROUGHS CORPORATION (US) 1976-03-02 US claimed