⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3623849 | 1.00 | — | — | |
| SCHEMBL9693566 | 0.87 | — | — | |
| SCHEMBL9318446 | 0.87 | — | — | |
| SCHEMBL6288913 | 0.87 | — | — | |
| SCHEMBL2170354 | 0.82 | — | — | |
| SCHEMBL6839937 | 0.82 | — | — | |
| SCHEMBL30577787 | 0.82 | — | — | |
| SCHEMBL563874 | 0.82 | — | — | |
| SCHEMBL4305933 | 0.82 | — | — | |
| SCHEMBL1234510 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 938 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12433068-B2 | LED with ALGAINP window layer | QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD (CN) | 2025-09-30 | — | — | US | claimed |
| CN-114374380-B | All-solid-state high-voltage pulse module switch group | 西安理工大学 | 2025-06-17 | — | — | CN | claimed |
| CN-120127499-A | Multi-wavelength high-polarization-degree straight cavity surface emitting laser | 无锡华兴光电研究有限公司 | 2025-06-10 | — | — | CN | claimed |
| CN-112331552-B | Excimer lamp | 江西省纳米技术研究院 | 2025-04-08 | — | — | CN | claimed |
| CN-222654557-U | InP-based small-divergence-angle high-power semiconductor laser structure | 河南仕佳光子科技股份有限公司 | 2025-03-21 | — | — | CN | claimed |
| CN-119674696-A | Semiconductor laser with power monitoring function | 无锡华兴光电研究有限公司 | 2025-03-21 | — | — | CN | claimed |
| CN-119674697-A | Semiconductor laser structure capable of reducing hole burning effect | 无锡华兴光电研究有限公司 | 2025-03-21 | — | — | CN | claimed |
| CN-119497473-A | Light-emitting diode chip and preparation method thereof | 京东方华灿光电(苏州)有限公司 | 2025-02-21 | — | — | CN | claimed |
| CN-119050190-A | Self-driven photoelectric detector with graphene oxide barrier layer and preparation method thereof | 中国科学院半导体研究所 | 2024-11-29 | — | — | CN | claimed |
| CN-119009674-A | Light beam controllable direction-changing vertical cavity surface emitting laser based on phase change material grating | 深圳技术大学 | 2024-11-22 | — | — | CN | claimed |
| US-5121174-A | Gate-to-ohmic metal contact scheme for III-V devices | VITESSE SEMICONDUCTOR CORPORATION (US) | 1992-06-09 | — | — | US | claimed |
| EP-0285206-B1 | PROCESS FOR MAKING A FIELD EFFECT TRANSISTOR TYPE SEMICONDUCTOR DEVICE | LABORATOIRES D'ELECTRONIQUE PHILIPS (FR) | 1992-01-15 | — | — | EP | claimed |
| US-5012318-A | Hybrid semiconductor device implemented by combination of heterojunction bipolar transistor and field effect transistor | NEC CORPORATION (JP) | 1991-04-30 | — | — | US | claimed |
| US-4892835-A | Method of manufacturing a field effect transistor | U.S. PHILIPS CORPORATION (US) | 1990-01-09 | — | — | US | claimed |
| EP-0125943-B1 | AN INDIUM PHOSPHIDE-BORON PHOSPHIDE HETEROJUNCTION BIPOLAR TRANSISTOR | ALLIED CORPORATION (US) | 1987-12-02 | — | — | EP | claimed |
| EP-0240683-A1 | Fabrication of insulated gallium arsenide-gate FET with self-aligned source/drain and submicron channel length | International Business Machines Corporation (US) | 1987-10-14 | — | — | EP | claimed |
| US-4689869-A | Fabrication of insulated gate gallium arsenide FET with self-aligned source/drain and submicron channel length | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1987-09-01 | — | — | US | claimed |
| US-4662060-A | Method of fabricating semiconductor device having low resistance non-alloyed contact layer | ALLIED CORPORATION (US) | 1987-05-05 | — | — | US | claimed |
| US-4611388-A | Method of forming an indium phosphide-boron phosphide heterojunction bipolar transistor | ALLIED CORPORATION (US) | 1986-09-16 | — | — | US | claimed |
| EP-0125943-A1 | An indium phosphide-boron phosphide heterojunction bipolar transistor | ALLIED CORPORATION (US) | 1984-11-21 | — | — | EP | claimed |