SCHEMBL564207

SCHEMBL564207

COC1CCC1OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15870582 1.00
SCHEMBL12226908 1.00 APLNR (0.43)
SCHEMBL10149726 1.00
SCHEMBL11880932 0.89 APLNR (0.39)
SCHEMBL10268948 0.84 KDM4E (0.46)
SCHEMBL11501519 0.84 KDM4E (0.46)
SCHEMBL15062108 0.84
SCHEMBL21727237 0.84 KDM4E (0.46)
SCHEMBL9197226 0.84
SCHEMBL5481927 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 257 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240027906-A1 COMPOSITION INCLUDING QUANTUM DOT, MANUFACTURING METHOD QUANTUM DOT AND COLOR FILTER SAMSUNG SDI CO., LTD. (KR) 2024-01-25 US claimed
US-11762289-B2 Composition including quantum dot, manufacturing method quantum dot and color filter SAMSUNG SDI CO., LTD. (KR) 2023-09-19 US claimed
US-10876046-B2 Curable composition including quantum dot, resin layer using the same and display device SAMSUNG SDI CO., LTD. (KR) 2020-12-29 US claimed
US-20200339876-A1 CURABLE COMPOSITION INCLUDING QUANTUM DOT, RESIN LAYER USING THE SAME AND DISPLAY DEVICE INCLUDING THE RESIN LAYER SAMSUNG SDI CO., LTD. (KR) 2020-10-29 US claimed
US-20190129302-A1 COMPOSITION INCLUDING QUANTUM DOT, MANUFACTURING METHOD QUANTUM DOT AND COLOR FILTER SAMSUNG SDI CO., LTD. (KR) 2019-05-02 US claimed
US-20180284557-A1 ELECTROCHEMICAL MIRROR SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-10-04 US claimed
EP-1300487-B1 Copper plating bath ROHM & HAAS ELECT MAT (US) 2017-10-04 EP claimed
US-9493886-B2 Low internal stress copper electroplating method ROHM AND HAAS ELECTRONIC MATERIALS LLC 2016-11-15 US claimed
US-20130240368-A1 LOW INTERNAL STRESS COPPER ELECTROPLATING METHOD ROHM AND HAAS ELECTRONIC MATERIAL LLC (US) 2013-09-19 US claimed
EP-2568063-A1 Low internal stress copper electroplating method Rohm and Haas Electronic Materials LLC (US) 2013-03-13 EP claimed
US-20030085132-A1 Plating bath and method for depositing a metal layer on a substrate SHIPLEY COMPANY, L.L.C. 2003-05-08 US claimed
EP-1308540-A1 Plating bath and method for depositing a metal layer on a substrate Shipley Co. L.L.C. (US) 2003-05-07 EP claimed
EP-1308541-A1 Plating bath and method for depositing a metal layer on a substrate Shipley Company LLC (US) 2003-05-07 EP claimed
US-20030070934-A1 Plating bath and method for depositing a metal layer on a substrate SHIPLEY COMPANY, L.L.C. 2003-04-17 US claimed
US-20030066756-A1 Plating bath and method for depositing a metal layer on a substrate SHIPLEY COMPANY, L.L.C. 2003-04-10 US claimed
EP-1300486-A1 Plating bath and method for depositing a metal layer on a substrate Shipley Co. L.L.C. (US) 2003-04-09 EP claimed
EP-1300488-A2 Plating path and method for depositing a metal layer on a substrate Shipley Co. L.L.C. (US) 2003-04-09 EP claimed
EP-1300487-A1 Plating bath and method for depositing a metal layer on a substrate Shipley Co. L.L.C. (US) 2003-04-09 EP claimed
EP-0815178-A1 CLEANING AND/OR STRIPPING ETHER OR DIACID ESTER BASED COMPOSITION RHONE-POULENC CHIMIE (FR) 1998-01-07 EP claimed
WO-1996030453-A1 CLEANING AND/OR STRIPPING ETHER OR DIACID ESTER BASED COMPOSITION RHONE-POULENC CHIMIE (FR) 1996-10-03 WO claimed