Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TET2 | Q6N021 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2536716 | 0.80 | — | — | |
| SCHEMBL565432 | 0.79 | TET2 (0.37) | TET2 | |
| SCHEMBL18479696 | 0.73 | ALDH1A1 (0.39) | — | |
| SCHEMBL18791207 | 0.72 | — | — | |
| SCHEMBL18457345 | 0.72 | — | — | |
| SCHEMBL22279638 | 0.72 | — | — | |
| SCHEMBL18643958 | 0.72 | — | — | |
| SCHEMBL2960890 | 0.72 | — | — | |
| SCHEMBL20280522 | 0.71 | CYP2C9 (0.31) | — | |
| SCHEMBL1482962 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9229320-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-01-05 | — | — | US | disclosed |
| US-9023576-B2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2015-05-05 | — | — | US | disclosed |
| US-8951709-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-02-10 | — | — | US | disclosed |
| US-8614048-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2013-12-24 | — | — | US | disclosed |
| US-20120100482-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-04-26 | — | — | US | disclosed |
| US-20120100483-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-04-26 | — | — | US | disclosed |
| US-20120034563-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-02-09 | — | — | US | disclosed |
| US-20110076622-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-03-31 | — | — | US | disclosed |
| US-7906268-B2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2011-03-15 | — | — | US | disclosed |
| US-20050208419-A1 | Fluoropolymer containing unsaturated monomer with a adamantyl, decalin, norbornyl, cedrol , cyclohexyl, cycloheptyl, cyclooctyl , a cyclodecanyl, cyclododecanyl and/or tricyclodecanyl group; sulfonium type compound generates acid upon exposure to actinic radiation; semiconductor, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2005-09-22 | — | — | US | disclosed |