SCHEMBL565254

SCHEMBL565254

CCC(C)(C)[SiH2]O[SiH2]C(C)(C)CC

nearest known ligand 0.35

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.35
TDP1 Q9NUW8 2/20 0.35
ALDH1A1 P00352 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8632640 0.75
SCHEMBL14840767 0.75
SCHEMBL5080861 0.71
SCHEMBL2057395 0.69
SCHEMBL2057540 0.68
SCHEMBL3207645 0.67 TSHR (0.43) TSHRTDP1ALDH1A1
SCHEMBL461524 0.62
SCHEMBL20970124 0.62
SCHEMBL10777347 0.62
SCHEMBL17024465 0.62

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 68 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6268436-B1 Approach to formulating irradiation sensitive positive resists INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-07-31 US claimed
US-6210856-B1 Resist composition and process of forming a patterned resist layer on a substrate INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-04-03 US claimed
US-6103447-A Approach to formulating irradiation sensitive positive resists INTERNATIONAL BUSINESS MACHINES CORP. (US) 2000-08-15 US claimed
US-9484248-B2 Patternable dielectric film structure with improved lithography and method of fabricating same GLOBALFOUNDRIES INC. (KY) 2016-11-01 US disclosed
US-9431295-B2 Interconnect structure including a modified photoresist as a permanent interconnect dielectric and method of fabricating same GLOBALFOUNDRIES INC. (KY) 2016-08-30 US disclosed
US-9035462-B2 Airgap-containing interconnect structure with patternable low-k material and method of fabricating INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2015-05-19 US disclosed
US-8916978-B2 Interconnect structure and method of fabricating INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-12-23 US disclosed
US-8853856-B2 Methodology for evaluation of electrical characteristics of carbon nanotubes INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-10-07 US disclosed
US-8828749-B2 Methodology for evaluation of electrical characteristics of carbon nanotubes INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-09-09 US disclosed
US-8795556-B2 Self-aligned permanent on-chip interconnect structure formed by pitch splitting INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-08-05 US disclosed
US-8659115-B2 Airgap-containing interconnect structure with improved patternable low-K material and method of fabricating INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-02-25 US disclosed
US-20080150091-A1 MULTIPLE PATTERNING USING PATTERNABLE LOW-k DIELECTRIC MATERIALS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-06-26 US disclosed
US-6586156-B2 A chemically amplified (CA) photoresist system wherein a terpolymer containing ketal/phenolic/silicon based sidechains is provided. Among other things, the terpolymers provide for improved bake technologies. In another aspect a process for INTERNATIONAL BUSINESS MACHINES CORPORATION 2003-07-01 US disclosed
US-20030049561-A1 Etch improved resist systems containing acrylate (or methacrylate) silane monomers INTERNATIONAL BUSINESS MACHINES CORPORATION 2003-03-13 US disclosed
US-6303263-B1 Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups INTERNATIONAL BUSINESS MACHINES MACHINES 2001-10-16 US disclosed
US-6268436-B1 Approach to formulating irradiation sensitive positive resists INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-07-31 US disclosed
US-6210856-B1 Resist composition and process of forming a patterned resist layer on a substrate INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-04-03 US disclosed
US-6103447-A Approach to formulating irradiation sensitive positive resists INTERNATIONAL BUSINESS MACHINES CORP. (US) 2000-08-15 US disclosed
EP-0939340-A1 Radiation sensitive resists International Business Machines Corporation (US) 1999-09-01 EP disclosed
EP-0939339-A1 Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups International Business Machines Corporation (US) 1999-09-01 EP disclosed