SCHEMBL565313

SCHEMBL565313

C=C[Si](C)(OC(C)(C)C)OC(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1502326 0.84
SCHEMBL564437 0.77
SCHEMBL8153732 0.76
SCHEMBL1066376 0.73
SCHEMBL4274903 0.73
SCHEMBL81570 0.73
SCHEMBL1905434 0.72
SCHEMBL1404386 0.72 TSHR (0.35)
SCHEMBL17918176 0.72
Water SCHEMBL29019951 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 123 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10991571-B2 High temperature atomic layer deposition of silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2021-04-27 US claimed
US-20190189431-A1 High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films VERSUM MATERIALS US, LLC (US) 2019-06-20 US claimed
US-20170256399-A9 High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2017-09-07 US claimed
US-20160365244-A1 High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-12-15 US claimed
US-20130295779-A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC 2013-11-07 US claimed
EP-2650399-A2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-10-16 EP claimed
US-20110021460-A1 SELECTIVE HYDROSILYLATION METHOD AND PRODUCT MOMENTIVE PERFORMANCE MATERIALS, INC. 2011-01-27 US claimed
US-7834118-B2 Selective hydrosilylation method with rhodium catalyst MOMENTIVE PERFORMANCE MATERIALS INC (US) 2010-11-16 US claimed
US-20080081924-A1 SELECTIVE MOLAR EXCESS HYDROSILYLATION METHOD AND PRODUCT MOMENTIVE PERFORMANCE MATERIALS INC. 2008-04-03 US claimed
US-20080076896-A1 SELECTIVE HYDROSILYLATION METHOD AND PRODUCT MOMENTIVE PERFORMANCE MATERIALS INC. 2008-03-27 US claimed
US-20080076939-A1 Two-step process of reacting a dihydroorganosiloxane with a terminally unsaturated compound in the presence of a rhodium catalyst and then with a different unsaturated compound to form an assymetrically disubstitued siloxane; one of the unsaturated compounds is an alkenyl polyalkylene oxide MOMENTIVE PERFORMANCE MATERIALS INC. 2008-03-27 US claimed
US-7326761-B1 Selective hydrosilylation method and product GENERAL ELECTRIC COMPANY (US) 2008-02-05 US claimed
US-20080015325-A1 SELECTIVE HYDROSILYLATION METHOD AND PRODUCT MOMENTIVE PERFORMANCE MATERIALS INC. 2008-01-17 US claimed
US-20080015323-A1 SELECTIVE HYDROSILYLATION METHOD AND PRODUCT MOMENTIVE PERFORMANCE MATERIALS INC. 2008-01-17 US claimed
US-20080015324-A1 Use of tris(dibutylsulfide)rhodium trichloride catalyst to make a siloxane-functional polyoxyalkylene glycol; use as a hydrolysis resistant-imparting agent for a composition in need of hydrolysis resistance such as agrochemical, personal care, and home care formulations MOMENTIVE PERFORMANCE MATERIALS INC. 2008-01-17 US claimed
US-7259220-B1 Selective hydrosilylation method GENERAL ELECTRIC COMPANY (US) 2007-08-21 US claimed
US-20060257673-A1 Laminates, their production and use CELANESE EMULSIONS GMBH (DE) 2006-11-16 US claimed
EP-1721731-A1 Layered structure, method of its preparation and use Celanese Emulsions GmbH (DE) 2006-11-15 EP claimed
US-6114423-A Redispersable cross-linkable dispersion powders WACKER-CHEMIE GMBH (DE) 2000-09-05 US claimed
EP-0840754-B1 REDISPERSABLE CROSS-LINKABLE DISPERSION POWDERS WACKER CHEMIE GMBH (DE) 1999-06-02 EP claimed