SCHEMBL569299

SCHEMBL569299

[Cu+2].[GeH2-].[GeH2-]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29356863 0.71
SCHEMBL29402601 0.71
SCHEMBL30311184 0.71
SCHEMBL29355672 0.71
SCHEMBL29379549 0.71
SCHEMBL30290785 0.71
SCHEMBL388724 0.50
SCHEMBL5877920 0.50
Iodide SCHEMBL335403 0.50
Potassium Ion SCHEMBL11651980 0.50

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 183 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4609015-B1 METHOD OF ELECTROCHEMICAL CONVERSION OF AQUEOUS SOLUTIONS OF CARBONATES, BICARBONATES, CO2, C2-C5 ACIDS, SALTS OF C2-C5 ACIDS AND MIXTURES THEREOF USTAV CHEMICKYCH PROCESU AV CR V V I (CZ) 2026-05-06 EP claimed
US-12538781-B2 Method of manufacturing integrated circuit device with bonding structure NANYA TECHNOLOGY CORPORATION (TW) 2026-01-27 US claimed
EP-4609015-A2 METHOD OF ELECTROCHEMICAL CONVERSION OF AQUEOUS SOLUTIONS OF CARBONATES, BICARBONATES, CO2, C2-C5 ACIDS, SALTS OF C2-C5 ACIDS AND MIXTURES THEREOF Ustav Chemickych Procesu AV CR, V.V.I. (CZ) 2025-09-03 EP claimed
US-12159831-B2 Method of manufacturing integrated circuit device with bonding structure NANYA TECHNOLOGY CORPORATION (TW) 2024-12-03 US claimed
WO-2024088453-A2 METHOD OF ELECTROCHEMICAL CONVERSION OF AQUEOUS SOLUTIONS OF CARBONATES, BICARBONATES, CO2, C2-C5 ACIDS, SALTS OF C2-C5 ACIDS AND MIXTURES THEREOF USTAV CHEMICKYCH PROCESU AV CR, V. V. I. (CZ) 2024-05-02 WO claimed
US-20240088020-A1 METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE WITH BONDING STRUCTURE NANYA TECHNOLOGY CORPORATION (TW) 2024-03-14 US claimed
US-11894304-B2 Semiconductor device with air gap below landing pad and method for forming the same NANYA TECHNOLOGY CORPORATION (TW) 2024-02-06 US claimed
US-20230386999-A1 METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE WITH BONDING STRUCTURE NANYA TECHNOLOGY CORPORATION (TW) 2023-11-30 US claimed
US-11764148-B2 Method of forming integrated circuit device with bonding structure NANYA TECHNOLOGY CORPORATION (TW) 2023-09-19 US claimed
US-20230014071-A1 SEMICONDUCTOR DEVICE WITH AIR GAP BELOW LANDING PAD AND METHOD FOR FORMING THE SAME NANYA TECHNOLOGY CORPORATION, (TW) 2023-01-19 US claimed
US-6821890-B2 Method for improving adhesion to copper INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-11-23 US claimed
CN-1138304-C Method for improving copper adhesion �Ҵ���˾ 2004-02-11 CN claimed
US-20010023987-A1 Method for improving adhesion to copper GLOBALFOUNDRIES U.S. INC. 2001-09-27 US claimed
US-6271595-B1 IN SEMICONDUCTOR DEVICES PROVIDED WITH AN INTERVENING LAYER OF GERMANIUM OXIDE, COPPER (WIRE), COPPER GERMANIDE AND/OR GERMANIUM NITRIDE BETWEEN THE COPPER AND DIELECTRIC LAYER OF SILICON OXIDE OR NITRIDE INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-08-07 US claimed
US-6255734-B1 Passivated copper line semiconductor device structure TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) 2001-07-03 US claimed
US-6181013-B1 Method for selective growth of Cu3Ge or Cu5Si for passivation of damascene copper structures and device manufactured thereby TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) 2001-01-30 US claimed
US-6143657-A SELECTIVELY GROWING COPPER GERMANIDE COMPOUND AS DEPOSIT ON BOTTOM OF CONTACT HOLE, FORMING BARRIER LAYER OVER COPPER GERMANIDE, FORMING COPPER PLUG THEREOVER TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) 2000-11-07 US claimed
CN-1269606-A Method for improving copper adhesion INTERNAT BUSINESS MACHIENS CO (US) 2000-10-11 CN claimed
US-6130162-A Method of preparing passivated copper line and device manufactured thereby TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) 2000-10-10 US claimed
US-6046108-A Method for selective growth of Cu3 Ge or Cu5 Si for passivation of damascene copper structures and device manufactured thereby TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) 2000-04-04 US claimed