SCHEMBL5701074

SCHEMBL5701074

CC[Si](CC)(CC)NC(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6028313 0.75 TSHR (0.32)
SCHEMBL11538491 0.75
SCHEMBL15310128 0.73
SCHEMBL6027635 0.71
SCHEMBL234998 0.67
SCHEMBL55526 0.65
SCHEMBL25175175 0.65
SCHEMBL234609 0.65
SCHEMBL3008563 0.65
SCHEMBL5403964 0.65 TP53 (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 68 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12421603-B2 Composition for high temperature atomic layer deposition of high quality silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2025-09-23 US claimed
US-11649547-B2 Deposition of carbon doped silicon oxide VERSUM MATERIALS US, LLC (US) 2023-05-16 US claimed
US-20210363639-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC (US) 2021-11-25 US claimed
EP-3902939-A1 DEPOSITION OF CARBON DOPED SILICON OXIDE Versum Materials US, LLC (US) 2021-11-03 EP claimed
CN-113383108-A Deposition of carbon-doped silicon oxide 弗萨姆材料美国有限责任公司 2021-09-10 CN claimed
EP-3844319-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS Versum Materials US, LLC (US) 2021-07-07 EP claimed
CN-112969816-A Compositions for high temperature atomic layer deposition of high quality silicon oxide films 弗萨姆材料美国有限责任公司 2021-06-15 CN claimed
WO-2020163359-A1 DEPOSITION OF CARBON DOPED SILICON OXIDE VERSUM MATERIALS US, LLC (US) 2020-08-13 WO claimed
US-20200248309-A1 Deposition Of Carbon Doped Silicon Oxide VERSUM MATERIALS US, LLC (US) 2020-08-06 US claimed
WO-2020072768-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC (US) 2020-04-09 WO claimed
US-20130295779-A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC 2013-11-07 US claimed
EP-2650399-A2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-10-16 EP claimed
US-20260076110-A1 HYBRID ATOMIC LAYER DEPOSITION LAM RES CORP (US) 2026-03-12 US disclosed
US-20250372367-A1 DEPOSITION AND ETCH OF SILICON-CONTAINING LAYER LAM RES CORP (US) 2025-12-04 US disclosed
US-12421603-B2 Composition for high temperature atomic layer deposition of high quality silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2025-09-23 US disclosed
US-20250197996-A1 LOW-K DIELECTRIC PROTECTION DURING PLASMA DEPOSITION OF SILICON NITRIDE LAM RES CORP (US) 2025-06-19 US disclosed
US-5707770-A TITANIA OR ALUMINA PARTICLES SURFACE TREATED WITH A SILICON COMPOUND OR SILICONE OIL, IMPROVED PERFORMANCE IN HIGH HUMIDITY CANON KABUSHIKI KAISHA (JP) 1998-01-13 US disclosed
EP-0713153-A2 Toner for developing electrostatic images, two component type developer, developing method, image forming method, heat fixing method, and process for producing toner CANON KABUSHIKI KAISHA (JP) 1996-05-22 EP disclosed
US-5493003-A MIXTURES OF AMINES, AMIDES AND/OR ESTERS OF TETRACARBOXYLIC ACIDS HAVING AMIDO OR ESTER GROUPS SUBSTITUTED WITH CARBOXYL, SULFO, SILYL OR SILOXY GROUPS, ELECTRONICS BASF LACKE + FARBEN AKTIENGESELLSCHAFT (DE) 1996-02-20 US disclosed
EP-0648796-A1 Solutions of polyimide-forming substances and their use BASF Lacke + Farben AG (DE) 1995-04-19 EP disclosed