SCHEMBL55526

SCHEMBL55526

CC[Si](CC)(CC)N[Si](CC)(CC)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Lithium SCHEMBL29592603 0.95
SCHEMBL28645213 0.95
SCHEMBL2512423 0.84
SCHEMBL28646024 0.76
SCHEMBL15309774 0.73 MEN1 (0.30)
SCHEMBL149430 0.73
SCHEMBL6282145 0.71 TSHR (0.35)
SCHEMBL25166709 0.70
SCHEMBL2511558 0.70
SCHEMBL5403964 0.70 TP53 (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 329 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4612199-A1 RECYCLATE POLYOL DISPERSION WITH IMPROVED PHASE STABILITY Dow Global Technologies LLC (US) 2025-09-10 EP claimed
WO-2024137494-A1 RECYCLATE POLYOL DISPERSION WITH IMPROVED PHASE STABILITY DOW GLOBAL TECHNOLOGIES LLC (US) 2024-06-27 WO claimed
US-20230420256-A1 METHOD OF FORMING A PHOTORESIST UNDERLAYER AND STRUCTURE INCLUDING SAME ASM IP HOLDING B.V. (NL) 2023-12-28 US claimed
US-11735422-B2 Method of forming a photoresist underlayer and structure including same ASM IP HOLDING B.V. (NL) 2023-08-22 US claimed
US-10991571-B2 High temperature atomic layer deposition of silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2021-04-27 US claimed
US-20210111025-A1 METHOD OF FORMING A PHOTORESIST UNDERLAYER AND STRUCTURE INCLUDING SAME ASM IP HOLDING B.V. (NL) 2021-04-15 US claimed
CN-110790737-A Preparation method of 2, 3-dihydro-3, 5-dihydroxy-6-ethyl-4H-pyran-4-one 河南中烟工业有限责任公司 2020-02-14 CN claimed
EP-3135664-B1 ALKOXIDE COMPOUND, RAW MATERIAL FOR FORMING THIN FILM, METHOD FOR PRODUCING THIN FILM, AND ALCOHOL COMPOUND ADEKA CORP (JP) 2019-10-23 EP claimed
US-20190189431-A1 High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films VERSUM MATERIALS US, LLC (US) 2019-06-20 US claimed
US-9887080-B2 Method of forming SiOCN material layer and method of fabricating semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-02-06 US claimed
US-20170256399-A9 High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2017-09-07 US claimed
US-20170186603-A1 METHOD OF FORMING SiOCN MATERIAL LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-06-29 US claimed
US-20160365244-A1 High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-12-15 US claimed
US-20130295779-A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC 2013-11-07 US claimed
EP-2650399-A2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-10-16 EP claimed
US-20100004414-A1 POLYMERS FUNCTIONALIZED WITH IMIDE COMPOUNDS CONTAINING A PROTECTED AMINO GROUP BRIDGESTONE CORPORATION (JP) 2010-01-07 US claimed
US-12637485-B2 Method of manufacturing alkoxysilane compound LG CHEM, LTD. (KR) 2026-05-26 US disclosed
US-20260121173-A1 THERMAL INSULATION SHEET BETWEEN BATTERY CELLS FOR ELECTRIC AUTOMOBILE SUMITOMO RIKO COMPANY LIMITED (JP) 2026-04-30 US disclosed
EP-0073559-A2 Process for preparing desacetoxycephalosporanic acid ELI LILLY AND COMPANY (US) 1983-03-09 EP disclosed
US-4346219-A Process for preparing desacetoxycephalosporanic acid ELI LILLY AND COMPANY (US) 1982-08-24 US disclosed