⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2267659 | 0.79 | — | — | |
| SCHEMBL2269624 | 0.75 | — | — | |
| SCHEMBL2271166 | 0.69 | — | — | |
| SCHEMBL2100114 | 0.67 | — | — | |
| SCHEMBL2271598 | 0.65 | TSHR (0.35) | — | |
| SCHEMBL2269240 | 0.64 | — | — | |
| SCHEMBL10429776 | 0.64 | — | — | |
| SCHEMBL2273462 | 0.64 | — | — | |
| SCHEMBL2104126 | 0.62 | — | — | |
| SCHEMBL20522630 | 0.62 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 170 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12604684-B2 | Method and system for mitigating underlayer damage during formation of patterned structures | ASM IP HOLDING B.V. (NL) | 2026-04-14 | — | — | US | claimed |
| US-12554191-B2 | Pellicle membrane and method of forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-02-17 | — | — | US | claimed |
| US-12431354-B2 | Silicon nitride and silicon oxide deposition methods using fluorine inhibitor | ASM IP HOLDING B.V. (NL) | 2025-09-30 | — | — | US | claimed |
| US-20250297360-A1 | SUBSTRATE PROCESSING METHOD | ASM IP HOLDING B.V. (NL) | 2025-09-25 | — | — | US | claimed |
| US-12392038-B2 | Thin-film deposition method and system | ASM IP HOLDING B.V. (NL) | 2025-08-19 | — | — | US | claimed |
| US-20250253145-A1 | SUBSTRATE PROCESSING METHOD | ASM IP HOLDING B.V. (NL) | 2025-08-07 | — | — | US | claimed |
| US-12276021-B2 | Methods of forming phosphosilicate glass layers, structures formed using the methods and systems for performing the methods | ASM IP HOLDING B.V. (NL) | 2025-04-15 | — | — | US | claimed |
| US-20230408904-A1 | PELLICLE MEMBRANE AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-12-21 | — | — | US | claimed |
| US-20230407477-A1 | SUBSTRATE PROCESSING APPARATUS INCLUDING IMPROVED EXHAUST STRUCTURE | ASM IP HOLDING B.V. (NL) | 2023-12-21 | — | — | US | claimed |
| CN-117248192-A | Substrate processing apparatus including improved exhaust structure | ASM IP私人控股有限公司 | 2023-12-19 | — | — | CN | claimed |
| US-9496328-B2 | Methods of manufacturing capacitors for semiconductor devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2016-11-15 | — | — | US | claimed |
| US-20160043163-A1 | METHODS OF MANUFACTURING CAPACITORS FOR SEMICONDUCTOR DEVICES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2016-02-11 | — | — | US | claimed |
| US-8383522-B2 | Micro pattern forming method | TOKYO ELECTRON LIMITED (JP) | 2013-02-26 | — | — | US | claimed |
| US-8197915-B2 | Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature | ASM JAPAN K.K. (JP) | 2012-06-12 | — | — | US | claimed |
| US-8168375-B2 | Patterning method | TOKYO ELECTRON LIMITED (JP) | 2012-05-01 | — | — | US | claimed |
| US-20110237082-A1 | MICRO PATTERN FORMING METHOD | TOKYO ELECTRON LIMITED (JP) | 2011-09-29 | — | — | US | claimed |
| US-7989354-B2 | Patterning method | TOKYO ELECTRON LIMITED (JP) | 2011-08-02 | — | — | US | claimed |
| US-20100255218-A1 | Method of Depositing Silicon Oxide Film by Plasma Enhanced Atomic Layer Deposition at Low Temperature | ASM JAPAN K.K. (JP) | 2010-10-07 | — | — | US | claimed |
| US-20100130015-A1 | PATTERNING METHOD | TOKYO ELECTRON LIMITED (JP) | 2010-05-27 | — | — | US | claimed |
| US-20100112496-A1 | PATTERNING METHOD | TOKYO ELECTRON LIMITED (JP) | 2010-05-06 | — | — | US | claimed |