⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL92704 | 0.61 | — | — | |
| SCHEMBL3758905 | 0.58 | — | — | |
| SCHEMBL8830340 | 0.50 | — | — | |
| SCHEMBL3802203 | 0.50 | — | — | |
| SCHEMBL44410 | 0.50 | — | — | |
| SCHEMBL9388785 | 0.50 | — | — | |
| SCHEMBL733360 | 0.50 | — | — | |
| SCHEMBL5544725 | 0.50 | — | — | |
| SCHEMBL590264 | 0.50 | — | — | |
| SCHEMBL490942 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 265 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230238463-A1 | BACK CONTACT SOLAR CELL AND PRODUCTION METHOD, AND BACK CONTACT BATTERY ASSEMBLY | LONGI GREEN ENERGY TECHNOLOGY CO., LTD. (CN) | 2023-07-27 | — | — | US | claimed |
| EP-4167300-A1 | BACK CONTACT SOLAR CELL AND PRODUCTION METHOD, AND BACK CONTACT BATTERY ASSEMBLY | Longi Green Energy Technology Co., Ltd. (CN) | 2023-04-19 | — | — | EP | claimed |
| CN-113824421-A | Packaging method of surface acoustic wave resonance device | 常州承芯半导体有限公司 | 2021-12-21 | — | — | CN | claimed |
| US-20180362806-A1 | CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME | K.C.TECH CO., LTD. (KR) | 2018-12-20 | — | — | US | claimed |
| EP-1647056-B1 | ENCAPSULATION STRUCTURE FOR DISPLAY DEVICES | KONINKLIJKE PHILIPS NV (NL) | 2017-04-12 | — | — | EP | claimed |
| US-8563421-B2 | Method of fabricating semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-10-22 | — | — | US | claimed |
| US-20130250008-A1 | LIQUID DROP EJECTING HEAD, IMAGE FORMING DEVICE, AND METHOD OF MANUFACTURING LIQUID DROP EJECTING HEAD | RICOH COMPANY, LTD. (JP) | 2013-09-26 | — | — | US | claimed |
| US-8368138-B2 | Non-volatile memory devices and methods of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-02-05 | — | — | US | claimed |
| US-8188599-B2 | Semiconductor device, its manufacturing method, and sputtering target material for use in the method | ADVANCED INTERCONNECT MATERIALS, LLC (JP) | 2012-05-29 | — | — | US | claimed |
| US-20120129356-A1 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE | KIM JIN-GYUN (KR) | 2012-05-24 | — | — | US | claimed |
| US-6649969-B2 | Nonvolatile semiconductor device | MITSUBISHI DENKI KABUSHIKI KAISHA (JP) | 2003-11-18 | — | — | US | claimed |
| US-20030127665-A1 | Poly-silicon thin film transistor and method for fabricating thereof | SHIH PO-SHENG (TW) | 2003-07-10 | — | — | US | claimed |
| EP-1320884-A2 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR | TOKYO ELECTRON LIMITED (JP) | 2003-06-25 | — | — | EP | claimed |
| US-20020105029-A1 | Poly-silicon thin film transistor and method for fabricating thereof | HANNSTAR DISPLAY CORPORATION (TW) | 2002-08-08 | — | — | US | claimed |
| US-20020100928-A1 | Nonvolatile semiconductor device and fabrication process for the same | MITSUBISHI DENKI KABUSHIKI KAISHA | 2002-08-01 | — | — | US | claimed |
| US-20020050649-A1 | Metal interconnect layer of semiconductor device and method for forming a metal interconnect layer | SAMSUNG ELECTRONICS CO., LTD. | 2002-05-02 | — | — | US | claimed |
| WO-2002023625-A2 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR | TOKYO ELECTRON LIMITED (JP) | 2002-03-21 | — | — | WO | claimed |
| US-5827778-A | FORMING INSULATOR FILM ON SUBSTRATE, FORMING INTERCONNECT PATTERN, FORMING SILICON OXIDE, SILICON OXIDE FLUORIDE LAYERS, ETCHING TO FORM VIA-HOLE | NEC CORPORATION (JP) | 1998-10-27 | — | — | US | claimed |
| US-5575886-A | Method for fabricating semiconductor device with chemical-mechanical polishing process for planarization of interlayer insulation films | NEC CORPORATION (JP) | 1996-11-19 | — | — | US | claimed |
| EP-0730298-A2 | A dielectric, a manufacturing method thereof, and semiconductor device using the same | HITACHI, LTD. (JP) | 1996-09-04 | — | — | EP | claimed |