⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7790526 | 0.67 | — | — | |
| SCHEMBL3325083 | 0.61 | — | — | |
| SCHEMBL126354 | 0.61 | — | — | |
| SCHEMBL5544725 | 0.50 | — | — | |
| SCHEMBL490942 | 0.50 | — | — | |
| SCHEMBL8830340 | 0.50 | — | — | |
| SCHEMBL1501491 | 0.50 | — | — | |
| SCHEMBL57783 | 0.50 | — | — | |
| SCHEMBL9388785 | 0.50 | — | — | |
| SCHEMBL733360 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 827 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122025591-A | Low-cost high-first-efficiency long-cycle silicon oxide carbon composite anode material and large-scale preparation method thereof | 深圳大学 | 2026-05-12 | — | — | CN | claimed |
| US-12568693-B2 | High-efficiency silicon heterojunction solar cell and manufacturing method thereof | Tongwei Solar (Jintang) Co., Ltd. (CN) | 2026-03-03 | — | — | US | claimed |
| US-12431482-B2 | Silicon oxide based high capacity anode materials for lithium ion batteries | IONBLOX, INC. (US) | 2025-09-30 | — | — | US | claimed |
| US-20250259950-A1 | SEMICONDUCTOR DEVICE WITH MULTIPLE PASSIVATION MATERIALS AT A BONDING SURFACE | MICRON TECHNOLOGY, INC. | 2025-08-14 | — | — | US | claimed |
| CN-120199891-A | Lithium ion battery electrolyte and lithium battery | 张家港市国泰华荣化工新材料有限公司 | 2025-06-24 | — | — | CN | claimed |
| US-20250203945-A1 | WRAP AROUND CONTACT WITH IMPROVED METAL THICKNESS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2025-06-19 | — | — | US | claimed |
| CN-116093300-B | Simple pre-lithium metal doped silicon oxygen carbon negative electrode material and preparation method thereof | 郑州中科新兴产业技术研究院 | 2025-04-29 | — | — | CN | claimed |
| CN-119798574-A | Gel electrolyte precursor, gel composite electrolyte, lithium ion battery and electric equipment | 比亚迪股份有限公司 | 2025-04-11 | — | — | CN | claimed |
| US-20250087665-A1 | STRUCTURE FOR IMPROVED ELECTRODE | TAIWAN MAXWAVE CO., LTD. (TW) | 2025-03-13 | — | — | US | claimed |
| CN-119542420-A | Improved electrode structure | 台湾波律股份有限公司 | 2025-02-28 | — | — | CN | claimed |
| WO-2002027777-A2 | SILICON OXIDE PATTERNING USING CVD PHOTORESIST | INFINEON TECHNOLOGIES NORTH AMERICA CORP. (US) | 2002-04-04 | — | — | WO | claimed |
| US-6323125-B1 | Simplified dual damascene process utilizing PPMSO as an insulator layer | CHARTERED SEMICONDUCTOR MANUFACTURING LTD (SG) | 2001-11-27 | — | — | US | claimed |
| CN-1309686-A | Particles having attached halide groups and methods of making the same | CABOT CORP (US) | 2001-08-22 | — | — | CN | claimed |
| EP-1110241-A1 | INTERCONNECT LINE FORMED BY DUAL DAMASCENE USING DIELECTRIC LAYERS HAVING DISSIMILAR ETCHING CHARACTERISTICS | APPLIED MATERIALS, INC. (US) | 2001-06-27 | — | — | EP | claimed |
| EP-1099248-A1 | MISALIGNMENT TOLERANT TECHNIQUES FOR DUAL DAMASCENE FABRICATION | Applied Materials, Inc. (US) | 2001-05-16 | — | — | EP | claimed |
| US-6127263-A | Misalignment tolerant techniques for dual damascene fabrication | APPLIED MATERIALS, INC. (US) | 2000-10-03 | — | — | US | claimed |
| WO-2000010202-A1 | INTERCONNECT LINE FORMED BY DUAL DAMASCENE USING DIELECTRIC LAYERS HAVING DISSIMILAR ETCHING CHARACTERISTICS | APPLIED MATERIALS, INC. (US) | 2000-02-24 | — | — | WO | claimed |
| WO-2000003433-A1 | MISALIGNMENT TOLERANT TECHNIQUES FOR DUAL DAMASCENE FABRICATION | APPLIED MATERIALS, INC. (US) | 2000-01-20 | — | — | WO | claimed |
| EP-0063112-A1 | SILICON CARBIDE BODIES | UNITED KINGDOM ATOMIC ENERGY AUTHORITY (GB) | 1982-10-27 | — | — | EP | claimed |
| WO-1982001545-A1 | SILICON CARBIDE BODIES | NORTH BERNARD | 1982-05-13 | — | — | WO | claimed |