SCHEMBL5838475

SCHEMBL5838475

CCCCCCCCC[SiH2]F

nearest known ligand 0.53

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.53
THRB P10828 1/20 0.53
EPHX1 P07099 1/20 0.43
CES2 O00748 3/20 0.41
CES1 P23141 3/20 0.41
DNM1 Q05193 5/20 0.40
ALDH1A1 P00352 3/20 0.40
LMNA P02545 2/20 0.40
MEN1 O00255 2/20 0.40
KMT2A Q03164 2/20 0.40
HSD17B10 Q99714 1/20 0.40
SLC22A1 O15245 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29058094 1.00 TSHR (0.53) TSHRTHRBEPHX1CES2CES1
SCHEMBL15655397 1.00 TSHR (0.53) TSHRTHRBEPHX1CES2CES1
SCHEMBL1148089 1.00 TSHR (0.53) TSHRTHRBEPHX1CES2CES1
SCHEMBL30925357 1.00 TSHR (0.53) TSHRTHRBEPHX1CES2CES1
SCHEMBL15656588 1.00 TSHR (0.53) TSHRTHRBEPHX1CES2CES1
SCHEMBL15657098 1.00 TSHR (0.53) TSHRTHRBEPHX1CES2CES1
SCHEMBL15655834 1.00 TSHR (0.53) TSHRTHRBEPHX1CES2CES1
SCHEMBL15657093 1.00 TSHR (0.53) TSHRTHRBEPHX1CES2CES1
SCHEMBL15658064 1.00 TSHR (0.53) TSHRTHRBEPHX1CES2CES1
SCHEMBL15656743 1.00 TSHR (0.53) TSHRTHRBEPHX1CES2CES1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111411512-B Preparation method of super-hydrophobic fabric and super-hydrophobic fabric 海泰纺织(苏州)有限公司 2024-05-21 CN disclosed
US-7015168-B2 Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation LSI LOGIC CORPORATION (US) 2006-03-21 US disclosed
US-20050098856-A1 Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation BELL SEMICONDUCTOR, LLC 2005-05-12 US disclosed
US-6858195-B2 Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material LSI LOGIC CORPORATION (US) 2005-02-22 US disclosed
US-6649219-B2 Reacting one or more organofluorosilanes with an oxidizing agent LSI LOGIC CORPORATION 2003-11-18 US disclosed
US-20030207750-A1 Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation BELL SEMICONDUCTOR, LLC 2003-11-06 US disclosed
US-6572925-B2 Doped silica LSI LOGIC CORPORATION 2003-06-03 US disclosed
US-20020119326-A1 Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation HILCO PATENT ACQUISITION 56, LLC 2002-08-29 US disclosed
US-20020117082-A1 Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation BELL SEMICONDUCTOR, LLC 2002-08-29 US disclosed
US-20020119315-A1 Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation HILCO PATENT ACQUISITION 56, LLC 2002-08-29 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020117082-A1 Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation SCO2, CBR1, NOXO1 TSHR 2791/4885THRB 4210/4885EPHX1 2989/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.