⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18497269 | 0.71 | — | — | |
| SCHEMBL29435316 | 0.71 | — | — | |
| SCHEMBL29376395 | 0.71 | — | — | |
| SCHEMBL59560 | 0.71 | — | — | |
| SCHEMBL9074915 | 0.71 | — | — | |
| SCHEMBL29350913 | 0.71 | — | — | |
| SCHEMBL29732782 | 0.71 | — | — | |
| SCHEMBL7546178 | 0.71 | — | — | |
| SCHEMBL1136 | 0.71 | — | — | |
| SCHEMBL3986820 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116018058-A | Resistive random access memory and preparation method thereof | 昕原半导体(上海)有限公司 | 2023-04-25 | — | — | CN | disclosed |
| WO-2023279543-A1 | SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR | 长鑫存储技术有限公司 | 2023-01-12 | — | — | WO | disclosed |
| US-7087102-B2 | Process for purification of germane | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2006-08-08 | — | — | US | disclosed |
| US-20050191854-A1 | Process for purification of germane | VERSUM MATERIALS US, LLC | 2005-09-01 | — | — | US | disclosed |
| US-6200895-B1 | FORMATION OF CONTACTS WITH REFRACTORY METAL AND/OR REFRACTORY METAL NITRIDE LINERS THAT ASSIST IN FILLING THE CONTACTS; CONTACTS ARE INITIALLY LINED WITH A TITANIUM LAYER AND TITANIUM NITRIDE LAYER; HIGH ASPECT RATIO | MICRON TECHNOLOGY, INC. | 2001-03-13 | — | — | US | disclosed |
| US-6091148-A | Electrical connection for a semiconductor structure | MICRON TECHNOLOGY INC (US) | 2000-07-18 | — | — | US | disclosed |
| US-4861623-A | Method for forming deposited film by generating precursor with halogenic oxidizing agent | CANON KABUSHIKI KAISHA (JP) | 1989-08-29 | — | — | US | disclosed |