⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6506321 | 0.63 | — | — | |
| SCHEMBL141549 | 0.60 | — | — | |
| SCHEMBL588311 | 0.59 | — | — | |
| SCHEMBL19514785 | 0.59 | — | — | |
| SCHEMBL6153994 | 0.58 | CYP1A2 (0.34) | — | |
| SCHEMBL9689074 | 0.58 | — | — | |
| SCHEMBL9784577 | 0.57 | — | — | |
| SCHEMBL1056250 | 0.56 | — | — | |
| SCHEMBL14423968 | 0.56 | — | — | |
| SCHEMBL15732764 | 0.56 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8114220-B2 | Co-solvent, chelating agent, optionally ion pairing reagent, and optionally surfactant, dense fluid; effectively removes photoresist and/or post-etch residue material from microelectronic device without substantially over-etching underlying silicon-containing layers and metallic interconnect material | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2012-02-14 | — | — | US | claimed |
| US-20080269096-A1 | Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices | Advance Technology Materials, Inc. (US) | 2008-10-30 | — | — | US | claimed |
| EP-1879704-A2 | FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2008-01-23 | — | — | EP | claimed |
| WO-2006113621-A2 | FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-10-26 | — | — | WO | claimed |
| US-8114220-B2 | Co-solvent, chelating agent, optionally ion pairing reagent, and optionally surfactant, dense fluid; effectively removes photoresist and/or post-etch residue material from microelectronic device without substantially over-etching underlying silicon-containing layers and metallic interconnect material | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2012-02-14 | — | — | US | disclosed |
| US-20080269096-A1 | Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices | Advance Technology Materials, Inc. (US) | 2008-10-30 | — | — | US | disclosed |
| EP-1879704-A2 | FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2008-01-23 | — | — | EP | disclosed |
| WO-2006113621-A2 | FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-10-26 | — | — | WO | disclosed |
| US-6638749-B1 | Fluoroether sulfate, fluoroether- polyethylene glycol block copolymer, fluoroether sorbitol or fluoroether dithicarbamate chelate; solubilizes proteins, peptides and amino acids | GENENCOR INTERNATIONAL, INC. | 2003-10-28 | — | — | US | disclosed |
| US-6562605-B1 | Extraction of water soluble biopolymers from a fluid; form carbon dioxide/surfactant mixture, mix with water soluble biopolymer, recover biopolymer from mixture | GENENCOR INTERNATIONAL, INC. | 2003-05-13 | — | — | US | disclosed |
| WO-1997018234-A2 | EXTRACTION OF PROTEINS INTO CARBON DIOXIDE | GENENCOR INTERNATIONAL, INC. (US) | 1997-05-22 | — | — | WO | disclosed |