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Sugi Predict / Compounds / Tetramethylammonium Ion

Tetramethylammonium Ion

Tetramethylammonium Ion

SCHEMBL589210

CCCCCCCCCCCCCCCCOS(=O)(=O)[O-].C[N+](C)(C)C

nearest known ligand 0.84

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ RECQL P46063 2/20 0.84
▸ TSHR P16473 2/20 0.84
▸ GLA P06280 1/20 0.84
▸ HPGD P15428 1/20 0.84
▸ MAPK1 P28482 1/20 0.84
▸ EPHX2 P34913 1/20 0.84
▸ BLM P54132 1/20 0.84
▸ CA1 P00915 10/20 0.55
▸ CA2 P00918 10/20 0.55
▸ CA9 Q16790 8/20 0.55
▸ CA12 O43570 3/20 0.55
▸ CA7 P43166 3/20 0.55
▸ CA14 Q9ULX7 3/20 0.55
▸ CA3 P07451 2/20 0.55
▸ CA4 P22748 2/20 0.55
▸ CA6 P23280 2/20 0.55
▸ CA5A P35218 2/20 0.55
▸ CA5B Q9Y2D0 2/20 0.55
▸ LMNA P02545 2/20 0.41
▸ ESR1 P03372 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetramethylammonium Ion SCHEMBL1639322 1.00 RECQL (0.84) RECQLTSHRGLAHPGDMAPK1
Tetramethylammonium Ion SCHEMBL2290716 1.00 RECQL (0.84) RECQLTSHRGLAHPGDMAPK1
Tetramethylammonium Ion SCHEMBL21633915 0.96 RECQL (0.85) RECQLTSHRGLAHPGDMAPK1
Tetramethylammonium Ion SCHEMBL28699181 0.96 RECQL (0.85) RECQLTSHRGLAHPGDMAPK1
Lithium Ion SCHEMBL25256858 0.91 RECQL (0.91) RECQLTSHRGLAHPGDMAPK1
SCHEMBL22283886 0.91 RECQL (0.91) RECQLTSHRGLAHPGDMAPK1
SCHEMBL22390647 0.91 RECQL (1.00) RECQLTSHRGLAHPGDMAPK1
SCHEMBL23387500 0.91 RECQL (1.00) RECQLTSHRGLAHPGDMAPK1
SCHEMBL22390632 0.91 RECQL (1.00) RECQLTSHRGLAHPGDMAPK1
SCHEMBL22390687 0.91 RECQL (1.00) RECQLTSHRGLAHPGDMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8114220-B2 Co-solvent, chelating agent, optionally ion pairing reagent, and optionally surfactant, dense fluid; effectively removes photoresist and/or post-etch residue material from microelectronic device without substantially over-etching underlying silicon-containing layers and metallic interconnect material ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2012-02-14 — — US claimed
US-20080269096-A1 Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices Advance Technology Materials, Inc. (US) 2008-10-30 — — US claimed
EP-1879704-A2 FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2008-01-23 — — EP claimed
WO-2006113621-A2 FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2006-10-26 — — WO claimed
US-8114220-B2 Co-solvent, chelating agent, optionally ion pairing reagent, and optionally surfactant, dense fluid; effectively removes photoresist and/or post-etch residue material from microelectronic device without substantially over-etching underlying silicon-containing layers and metallic interconnect material ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2012-02-14 — — US disclosed
US-20080269096-A1 Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices Advance Technology Materials, Inc. (US) 2008-10-30 — — US disclosed
EP-1879704-A2 FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2008-01-23 — — EP disclosed
WO-2006113621-A2 FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2006-10-26 — — WO disclosed