Tetramethylammonium Ion

Tetramethylammonium Ion

SCHEMBL589211

CCCCCCCCCCCCCCCCOS(=O)(=O)O.C[N+](C)(C)C

nearest known ligand 0.70

Full drug profile on Sugi Atlas →

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 10/20 0.55
CA2 P00918 10/20 0.55
CA9 Q16790 8/20 0.55
CA12 O43570 3/20 0.55
CA7 P43166 3/20 0.55
CA14 Q9ULX7 3/20 0.55
CA3 P07451 2/20 0.55
CA4 P22748 2/20 0.55
CA6 P23280 2/20 0.55
CA5A P35218 2/20 0.55
CA5B Q9Y2D0 2/20 0.55
RECQL P46063 2/20 0.53
GLA P06280 1/20 0.53
HPGD P15428 1/20 0.53
TSHR P16473 1/20 0.53
MAPK1 P28482 1/20 0.53
EPHX2 P34913 1/20 0.53
BLM P54132 1/20 0.53
CES2 O00748 1/20 0.44
RAD52 P43351 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetramethylammonium Ion SCHEMBL27493542 1.00 CA1 (0.55) CA1CA2CA9CA12CA7
Hydrogen Sulfide SCHEMBL27676602 0.96 CA1 (0.59) CA1CA2CA9CA12CA7
Hydrogen Sulfide SCHEMBL27676601 0.96 CA1 (0.59) CA1CA2CA9CA12CA7
Hydrogen Sulfide SCHEMBL1900178 0.96 CA1 (0.59) CA1CA2CA9CA12CA7
Hydrogen Sulfide SCHEMBL379099 0.94 CA1 (0.57) CA1CA2CA9CA12CA7
SCHEMBL4904743 0.94 CA1 (0.61) CA1CA2CA9CA12CA7
Octadecyl Sulfate SCHEMBL146302 0.94 CA1 (0.61) CA1CA2CA9CA12CA7
SCHEMBL9018754 0.94 CA1 (0.61) CA1CA2CA9CA12CA7
SCHEMBL10583495 0.94 CA1 (0.61) CA1CA2CA9CA12CA7
SCHEMBL22283885 0.94 CA1 (0.61) CA1CA2CA9CA12CA7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8114220-B2 Co-solvent, chelating agent, optionally ion pairing reagent, and optionally surfactant, dense fluid; effectively removes photoresist and/or post-etch residue material from microelectronic device without substantially over-etching underlying silicon-containing layers and metallic interconnect material ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2012-02-14 US claimed
US-20080269096-A1 Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices Advance Technology Materials, Inc. (US) 2008-10-30 US claimed
EP-1879704-A2 FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2008-01-23 EP claimed
WO-2006113621-A2 FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2006-10-26 WO claimed
US-8114220-B2 Co-solvent, chelating agent, optionally ion pairing reagent, and optionally surfactant, dense fluid; effectively removes photoresist and/or post-etch residue material from microelectronic device without substantially over-etching underlying silicon-containing layers and metallic interconnect material ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2012-02-14 US disclosed
US-20080269096-A1 Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices Advance Technology Materials, Inc. (US) 2008-10-30 US disclosed
EP-1879704-A2 FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2008-01-23 EP disclosed
WO-2006113621-A2 FORMULATIONS FOR CLEANING ION-IMPLANTED PHOTORESIST LAYERS FROM MICROELECTRONIC DEVICES ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2006-10-26 WO disclosed