SCHEMBL58985

SCHEMBL58985

[O-2].[O-2].[O-2].[Sr+2].[Ti+4]

nearest known ligand 0.00

Known targets — ChEMBL curated mechanism

ATP4AATP4B

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31244200 0.87
SCHEMBL30960969 0.87
SCHEMBL58411 0.87
SCHEMBL10519575 0.87
SCHEMBL1281482 0.87
SCHEMBL31244150 0.87
SCHEMBL31592025 0.87
SCHEMBL1877604 0.87
SCHEMBL21627256 0.87
Lithium Ion SCHEMBL491033 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 19730 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260150484-A1 LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE Sharp Display Technology Corporation (JP) 2026-05-28 US claimed
US-12628383-B2 Transistors having stacked 2D material channel layers and heterogeneous 2D material contacts layers epitaxial to the 2D material channel layers INTEL CORPORATION (US) 2026-05-12 US claimed
US-20260122879-A1 SEMICONDUCTOR DEDVICE AND METHOD FOR FABRICATING THE SAME SK HYNIX INC (KR) 2026-04-30 US claimed
US-12604484-B2 Semiconductor device including data storage structure and method of manufacturing data storage structure SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-14 US claimed
US-20260090066-A1 SEMICONDUCTOR DEVICE COMPRISING HIGH-K AMORPHOUS FLUORINATED CARBON THIN FILM GATE DIELECTRIC LAYER AND MANUFACTURING METHOD THEREOF THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY (IAC) (KR) 2026-03-26 US claimed
US-12588309-B2 Solid-state imaging apparatus, method for manufacturing solid-state imaging apparatus, and electronic apparatus SONY SEMICONDUCTOR SOLUTIONS CORPORATION (JP) 2026-03-24 US claimed
US-20260081089-A1 BACKEND FIELD EMISSION DEVICES SHARMA ABHISHEK A (US) 2026-03-19 US claimed
US-20260068547-A1 MEMRISTIVE COMPUTING SCHEMES IN THE BACK-END-OF-THE-LINE APPLIED MATERIALS, INC. (US) 2026-03-05 US claimed
US-20260068546-A1 MEMRISTIVE COMPUTING SCHEMES IN THE BACK-END-OF-THE-LINE APPLIED MATERIALS, INC. (US) 2026-03-05 US claimed
US-20260013107-A1 CAPACITOR, METHOD OF MANUFACTURING CAPACITOR, ELECTRONIC DEVICE INCLUDING CAPACITOR, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE SEOUL NAT UNIV R&DB FOUNDATION (KR) 2026-01-08 US claimed
US-5792324-A Method and apparatus of forming a thin film LG SEMICON CO., LTD. (KR) 1998-08-11 US claimed
EP-0204543-B2 Catalystfor cracking hydrocarbons contaminated with vanadium UNILEVER PLC (GB) 1997-12-29 EP claimed
US-5596214-A Non-volatile semiconductor memory device having a metal-insulator-semiconductor gate structure and method for fabricating the same NEC CORPORATION (JP) 1997-01-21 US claimed
US-RE35166-E CATALYST FOR CRACKING VANADIUM CONTAINING HYDROCARBON FEEDSTOCK UNILEVER PATENT HOLDINGS B.V. (NL) 1996-03-05 US claimed
US-5439652-A For removing organic contaminants from fluid or gas phases THE REGENTS OF THE UNIVERSITY OF COLORADO (US) 1995-08-08 US claimed
US-5423185-A High efficiency reflective optical system GENERAL DYNAMICS CORPORATION (US) 1995-06-13 US claimed
EP-0643395-A1 Storage capacitor with a conduction oxide electrode for metal oxide dielectrics International Business Machines Corporation (US) 1995-03-15 EP claimed
US-5383088-A Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1995-01-17 US claimed
US-5021145-A Alkaline earth metal tin and titanium oxides as vanactium passivators UNILEVER PATENT HOLDINGS B.V. (NL) 1991-06-04 US claimed
EP-0299879-A2 A superconducting thin film and a method for preparing the same SUMITOMO ELECTRIC INDUSTRIES LIMITED (JP) 1989-01-18 EP claimed