Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14859522 | 0.89 | — | — | |
| SCHEMBL29691684 | 0.87 | — | — | |
| SCHEMBL58985 | 0.87 | — | — | |
| SCHEMBL58317 | 0.87 | — | — | |
| SCHEMBL8686651 | 0.87 | — | — | |
| SCHEMBL865017 | 0.87 | — | — | |
| SCHEMBL1877604 | 0.75 | — | — | |
| SCHEMBL10519575 | 0.75 | — | — | |
| SCHEMBL21627256 | 0.75 | — | — | |
| SCHEMBL21144537 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 15174 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12628383-B2 | Transistors having stacked 2D material channel layers and heterogeneous 2D material contacts layers epitaxial to the 2D material channel layers | INTEL CORPORATION (US) | 2026-05-12 | — | — | US | claimed |
| US-12604484-B2 | Semiconductor device including data storage structure and method of manufacturing data storage structure | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-14 | — | — | US | claimed |
| US-20260090066-A1 | SEMICONDUCTOR DEVICE COMPRISING HIGH-K AMORPHOUS FLUORINATED CARBON THIN FILM GATE DIELECTRIC LAYER AND MANUFACTURING METHOD THEREOF | THE INDUSTRY & ACADEMIC COOPERATION IN CHUNGNAM NATIONAL UNIVERSITY (IAC) (KR) | 2026-03-26 | — | — | US | claimed |
| US-20260081089-A1 | BACKEND FIELD EMISSION DEVICES | SHARMA ABHISHEK A (US) | 2026-03-19 | — | — | US | claimed |
| US-12484226-B2 | Three-dimensional NAND memory device and method that eliminate leakage currents and short circuits | YANGTZE MEMORY TECHNOLOGIES CO., LTD. (CN) | 2025-11-25 | — | — | US | claimed |
| EP-3955280-B1 | VIA BLOCKING LAYER AND METHODS OF ITS FABRICATION | TAHOE RES LTD (IE) | 2025-10-08 | — | — | EP | claimed |
| US-12402305-B2 | Semiconductor devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-08-26 | — | — | US | claimed |
| US-12389688-B2 | Semiconductor device having dielectric layers of varying thicknesses | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-08-12 | — | — | US | claimed |
| US-20250248085-A1 | SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-07-31 | — | — | US | claimed |
| CN-120076323-A | Semiconductor device and method of manufacturing the same | 三星电子株式会社 | 2025-05-30 | — | — | CN | claimed |
| US-6045932-A | Formation of nonlinear dielectric films for electrically tunable microwave devices | THE REGENTS OF THE UNIVERSITIY OF CALIFORNIA (US) | 2000-04-04 | — | — | US | claimed |
| EP-0987765-A2 | DRAM trench capacitor | International Business Machines Corporation (US) | 2000-03-22 | — | — | EP | claimed |
| US-5993541-A | Process for nucleation of ceramics and product thereof | SCIENCE APPLICATIONS INTERNATIONAL CORPORATION | 1999-11-30 | — | — | US | claimed |
| CN-1235368-A | Stack capacitors with improved plug conductivity | SIEMENS AG (DE) | 1999-11-17 | — | — | CN | claimed |
| EP-0955679-A2 | Stack capacitor with improved plug conductivity | SIEMENS AKTIENGESELLSCHAFT (DE) | 1999-11-10 | — | — | EP | claimed |
| US-5918120-A | Method for fabricating capacitor-over-bit line (COB) dynamic random access memory (DRAM) using tungsten landing plug contacts and Ti/TiN bit lines | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 1999-06-29 | — | — | US | claimed |
| US-5895250-A | Method of forming semicrown-shaped stacked capacitors for dynamic random access memory | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) | 1999-04-20 | — | — | US | claimed |
| US-5895239-A | Method for fabricating dynamic random access memory (DRAM) by simultaneous formation of tungsten bit lines and tungsten landing plug contacts | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) | 1999-04-20 | — | — | US | claimed |
| US-5893734-A | Method for fabricating capacitor-under-bit line (CUB) dynamic random access memory (DRAM) using tungsten landing plug contacts | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) | 1999-04-13 | — | — | US | claimed |
| US-5792324-A | Method and apparatus of forming a thin film | LG SEMICON CO., LTD. (KR) | 1998-08-11 | — | — | US | claimed |